| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,643 pcs
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7643 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MMBT3906 is a PNP epitaxial silicon planar design transistor from Panjit, suitable for general purpose switching applications. It offers a maximum collector-emitter voltage (VCEO) of -40V and a continuous collector current (IC) of -200mA.
Key electrical characteristics include a DC current gain (hFE) ranging from 60 to 300 depending on the collector current. The device exhibits a maximum power dissipation of 330mW and a thermal resistance of 375°C/W. Its operating junction and storage temperature range is from -55°C to 150°C.
Packaged in a SOT-23 case, the MMBT3906 is designed for surface mounting. Its terminals are solderable per MIL-STD-750, Method 2026. The approximate weight of the component is 0.0084 grams.
This transistor complies with EU RoHS 2.0 standards and uses a green molding compound as per IEC 61249 standard.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MMBT3906 is -40V.
The MMBT3906 has a continuous collector current (IC) rating of -200mA.
The MMBT3906 is supplied in a SOT-23 plastic package.
The operating junction and storage temperature range for the MMBT3906 is -55°C to 150°C.
Yes, the MMBT3906 is RoHS 3 compliant.
The Moisture Sensitivity Level (MSL) for the MMBT3906 is 1.