MMBT3904WT1G The MMBT3904WT1G is an NPN bipolar junction transistor from On Semiconductor designed for general purpose amplifier applications. It features a 40V collector-emitter voltage and 200mA continuous collector current.
Mfr Part #:

MMBT3904WT1G

Available from 11 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMBT3904WT1G is an NPN bipolar junction transistor from On Semiconductor designed for general purpose amplifier applications. It features a 40V collector-emitter voltage and 200mA continuous collector current.
Total Stock: 981,424 pcs
$ Price Range: $0.99

MMBT3904WT1G Available from 11 distributors

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MMBT3904WT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Junction and Storage Temperature
Lead Style
Mounting Type
Operating Temperature
Pb-Free
Power
Supplier Device Package
Thermal Resistance Junction-to-Ambient
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Voltage Breakdown (Minimum @ IC = 1.0 mAdc, IB = 0)
Voltage Breakdown (Minimum @ IC = 10 /C 0109 Adc, IE = 0)
Voltage Breakdown (Minimum @ IE = 10 /C 0109 Adc, IC = 0)

MMBT3904WT1G Description

Short technical summary and product information.

The MMBT3904WT1G is a general-purpose NPN silicon transistor manufactured by On Semiconductor. It is designed for amplifier applications and housed in a compact SC-70-3 (SOT-323) surface mount package, making it suitable for low-power applications.

 

Key electrical specifications include a maximum collector-emitter voltage of 40V and a continuous collector current of 200mA. The device offers a minimum DC current gain (hFE) of 100 at 10mA collector current and 1V Vce. Its transition frequency is rated at 300MHz.

 

Thermal characteristics include a maximum power dissipation of 150mW at 25°C ambient temperature and a junction-to-ambient thermal resistance of 833°C/W. The operating and storage temperature range is from -55°C to +150°C.

 

This transistor is Pb-Free and Halogen Free, complying with RoHS standards. It is mounted using a surface mount technique.

MMBT3904WT1G Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: MMBT3904WT1G NPN 40V 200mA Surface Mount Transistor
Subcategory: Bipolar (BJT) - Single

MMBT3904WT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBT3904WT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT3904WT1G Features

  • NPN bipolar junction transistor.
  • 40V collector-emitter voltage.
  • 200mA continuous collector current.
  • 300MHz transition frequency.
  • SC-70-3 surface mount package.

MMBT3904WT1G Applications

  • Suitable for general-purpose amplification circuits.
  • Ideal for low-power switching applications.
  • Used in signal switching in consumer electronics.
  • Applicable in automotive electronic control units.
  • Suitable for small-signal amplification in communication devices.

MMBT3904WT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMBT3904WT1G?

The maximum collector-emitter voltage is 40V.

What is the continuous collector current rating?

The continuous collector current is 200mA.

What is the power dissipation of the MMBT3904WT1G?

The maximum power dissipation is 150mW at 25°C ambient temperature.

What is the operating temperature range?

The operating temperature range is -55°C to +150°C.

What is the DC Current Gain (hFE) of this transistor?

The minimum DC current gain (hFE) is 100 at 10mA collector current and 1V Vce.

What package type is the MMBT3904WT1G supplied in?

The MMBT3904WT1G is supplied in an SC-70, SOT-323 package.

Is the MMBT3904WT1G RoHS compliant?

Yes, the MMBT3904WT1G is RoHS3 Compliant.

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