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| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Junction and Storage Temperature | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Pb-Free | |
| Power | |
| Supplier Device Package | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| Voltage Breakdown (Minimum @ IC = 1.0 mAdc, IB = 0) | |
| Voltage Breakdown (Minimum @ IC = 10 /C 0109 Adc, IE = 0) | |
| Voltage Breakdown (Minimum @ IE = 10 /C 0109 Adc, IC = 0) |
The MMBT3904WT1G is a general-purpose NPN silicon transistor manufactured by On Semiconductor. It is designed for amplifier applications and housed in a compact SC-70-3 (SOT-323) surface mount package, making it suitable for low-power applications.
Key electrical specifications include a maximum collector-emitter voltage of 40V and a continuous collector current of 200mA. The device offers a minimum DC current gain (hFE) of 100 at 10mA collector current and 1V Vce. Its transition frequency is rated at 300MHz.
Thermal characteristics include a maximum power dissipation of 150mW at 25°C ambient temperature and a junction-to-ambient thermal resistance of 833°C/W. The operating and storage temperature range is from -55°C to +150°C.
This transistor is Pb-Free and Halogen Free, complying with RoHS standards. It is mounted using a surface mount technique.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 40V.
The continuous collector current is 200mA.
The maximum power dissipation is 150mW at 25°C ambient temperature.
The operating temperature range is -55°C to +150°C.
The minimum DC current gain (hFE) is 100 at 10mA collector current and 1V Vce.
The MMBT3904WT1G is supplied in an SC-70, SOT-323 package.
Yes, the MMBT3904WT1G is RoHS3 Compliant.