MMBT3904TT1G The MMBT3904TT1G is an NPN silicon transistor from On Semiconductor designed for general purpose amplifier applications. It features a 40V collector-emitter voltage and 200mA continuous collector current.
Mfr Part #:

MMBT3904TT1G

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMBT3904TT1G is an NPN silicon transistor from On Semiconductor designed for general purpose amplifier applications. It features a 40V collector-emitter voltage and 200mA continuous collector current.
Total Stock: 597,335 pcs
$ Price Range: $0.02

MMBT3904TT1G Available from 5 distributors

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MMBT3904TT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Cutoff Current
Collector Cutoff Current
Collector-Base Voltage
Collector-Emitter Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Frequency
Halogen Free
Junction and Storage Temperature Range
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ FR -4 Board, (Note 1) @ TA = 25 °C)
Power Dissipation (Maximum @ FR -4 Board, Note 2, TA=25 °C)
Power Dissipation (Maximum)
Supplier Device Package
Tape & Reel
Thermal Resistance Junction To Ambient (Nominal @ Note 1)
Thermal Resistance Junction To Ambient (Nominal @ Note 2)
Transistor Type
Vce Saturation
Vce Saturation (Max) @ Ib, Ic
Voltage
gain (Minimum @ 10 mA, 1 V)

MMBT3904TT1G Description

Short technical summary and product information.

The MMBT3904TT1G is a general-purpose NPN silicon transistor manufactured by On Semiconductor. It is designed for amplifier applications and housed in a compact SOT-416 (SC-75) surface-mount package, making it suitable for low-power applications.

 

Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of 200mA. The transistor offers a DC current gain (hFE) of 100 minimum at 10mA and 1V, and a frequency response up to 300MHz. The saturation voltage (Vce) is a maximum of 300mV at 5mA collector current and 50mA base current.

 

Thermal specifications include a maximum power dissipation of 300mW on an FR-4 board with a 1.0 x 1.0 inch pad, and a junction-to-ambient thermal resistance of 400°C/W. The operating temperature range is from -55°C to 150°C.

 

This device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant. It is supplied in tape and reel packaging with 3,000 units per reel.

MMBT3904TT1G Quick Information

Product Type: NPN Transistor
Series: MMBT3904TT1G
Canonical Name: MMBT3904TT1G NPN Transistor
Subcategory: Single

MMBT3904TT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MMBT3904TT1G Estimated Pricing

Qty Low High
1+ $0.02 $0.02

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT3904TT1G Features

  • NPN silicon transistor for general applications.
  • 40V collector-emitter voltage rating.
  • 200mA continuous collector current.
  • 300MHz frequency response.
  • Compact SOT-416 surface-mount package.

MMBT3904TT1G Applications

  • Used in switching circuits
  • Suitable for signal amplification
  • Ideal for compact electronic designs
  • Applicable in low to moderate voltage applications

MMBT3904TT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMBT3904TT1G?

The maximum collector-emitter voltage (VCEO) for the MMBT3904TT1G is 40 Vdc.

What is the continuous collector current of the MMBT3904TT1G transistor?

The MMBT3904TT1G can handle a continuous collector current of 200 mAdc.

What is the operating temperature range for this transistor?

The operating temperature range for the MMBT3904TT1G is -55°C to 150°C.

What package type is the MMBT3904TT1G supplied in?

The MMBT3904TT1G is supplied in the SC-75, SOT-416 package.

Is the MMBT3904TT1G RoHS compliant?

Yes, the MMBT3904TT1G is RoHS3 Compliant.

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