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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,741,020 pcs
|
1741020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Collector Cutoff (Max) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
This NPN bipolar junction transistor (BJT) from Diodes Incorporated, part number MMBT3904Q-7-F, is designed for surface mount applications. It features a collector-emitter breakdown voltage of 40V and can handle a maximum collector current of 200mA.
The transistor operates with a frequency of 300MHz and a power dissipation of 310mW. Its Vce saturation is specified at a maximum of 300mV at 5mA base current and 50mA collector current. The minimum DC current gain (hFE) is 100 at 10mA collector current and 1V Vce.
Packaged in a SOT-23-3 surface mount case, this component is suitable for various electronic circuits requiring a general-purpose NPN transistor. The operating temperature range is from -55°C to 150°C (TJ).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 40V.
The maximum collector current is 200mA.
The operating temperature range is -55°C to 150°C (TJ).
The package type is SOT-23-3.
The minimum DC current gain (hFE) is 100 at 10mA collector current and 1V Vce.