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The MMBT3904LT1G is a general-purpose NPN silicon transistor manufactured by On Semiconductor. It is designed for various electronic applications requiring reliable switching and amplification.
Key electrical characteristics include a maximum collector-emitter voltage of 40Vdc and a continuous collector current of 200mA. The transistor offers a DC current gain (hFE) of 100 at 10mA and 1V, with a saturation voltage (Vce sat) of 300mV at 5mA and 50mA. Its transition frequency is rated at 300MHz.
This device operates within a temperature range of -55°C to 150°C. It is housed in a compact SOT-23-3 (TO-236-3, SC-59) surface-mount package, suitable for space-constrained designs.
The MMBT3904LT1G is Pb-free and Halogen-free, and its RoHS status is compliant. The S prefix variant is AEC-Q101 qualified and PPAP capable for automotive applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 40 Vdc.
The continuous collector current is 200 mA.
The DC current gain (hFE) is a minimum of 100 at 10mA collector current and 1V collector-emitter voltage.
The operating temperature range is -55°C to 150°C.
It is supplied in a SOT-23-3 surface mount package.
Yes, the RoHS status is RoHS3 Compliant.