| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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215,792 pcs
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215792 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
105,350 pcs
|
105350 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MMBT3646 is an NPN bipolar junction transistor (BJT) designed for various switching applications. It offers a collector-emitter voltage (VCEO) of 15V and a continuous collector current (IC) of up to 300mA.
Key electrical characteristics include a maximum collector-emitter saturation voltage (VCE(sat)) of 0.5V at 300mA collector current and 30mA base current. The DC current gain (hFE) ranges from a minimum of 15 at 300mA collector current to 1V collector-emitter voltage, up to 30 at 30mA collector current and 400mV collector-emitter voltage.
This transistor is housed in a compact SOT-23-3 surface mount package, making it suitable for space-constrained designs. The operating temperature range is -55°C to 150°C (TJ), and it has a total power dissipation of 625mW at 25°C ambient temperature.
Switching characteristics include a typical turn-on time of 18ns and a turn-off time of 28ns, with delay, rise, fall, and storage times also specified. The thermal resistance junction-to-case is 83.3°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the MMBT3646 is 15V.
The MMBT3646 can handle a maximum continuous collector current of 300mA.
The MMBT3646 is available in a TO-236-3, SC-59, SOT-23-3 package.
The MMBT3646 operates within a temperature range of -55°C to 150°C (TJ).
The DC current gain (hFE) of the MMBT3646 is a minimum of 30 at 30mA collector current and 400mV collector-emitter voltage.
The typical turn-on time for the MMBT3646 is 18ns.
The typical turn-off time for the MMBT3646 is 28ns.