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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
215,792 pcs
|
215792 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
105,350 pcs
|
105350 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| CE(sat) (Maximum @ IC = 100 mAdc, IB = 10 mAdc) | |
| CE(sat) (Maximum @ IC = 30 mA, IB = 3 mA, TA =65 °C) | |
| CE(sat) (Maximum @ IC = 30 mAdc, IB = 3 mAdc) | |
| CE(sat) (Maximum @ IC = 300 mAdc, IB = 30 mAdc) | |
| Collector Current (DC) | |
| Collector-Base Breakdown Voltage | |
| Collector-Base Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Collector-Emitter Sustaining Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Delay Time | |
| Emitter-Base Breakdown Voltage | |
| Emitter-Base Voltage | |
| Fall Time | |
| ICES (Maximum @ VCE = 20 Vdc, VBE = 0) | |
| ICES (Maximum @ VCE = 20 Vdc, VBE = 0, TA = 65 °C) | |
| Input Capacitance | |
| Mounting Type | |
| Operating Temperature | |
| Operating and Storage Junction Temperature Range | |
| Output Capacitance | |
| PD (Maximum @ Derate above 25 °C) | |
| Pd (Maximum @ Ta=25 °C) | |
| Power | |
| Rise Time | |
| Storage Temperature | |
| Storage Time | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Turn Off Time | |
| Turn On Time | |
| VBE(sat) (Maximum @ IC = 100 mAdc, IB = 10 mAdc) | |
| VBE(sat) (Maximum @ IC = 30 mAdc, IB = 3 mAdc) | |
| VBE(sat) (Maximum @ IC = 300 mAdc, IB = 30 mAdc) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hFE (Minimum @ IC = 100 mAdc, VCE = 0.5 Vdc) | |
| hFE (Minimum @ IC = 30 mAdc, VCE = 0.4 Vdc) | |
| hFE (Minimum @ IC = 300 mAdc, VCE = 1 Vdc) |
The MMBT3646 is an NPN bipolar junction transistor (BJT) designed for various switching applications. It offers a collector-emitter voltage (VCEO) of 15V and a continuous collector current (IC) of up to 300mA.
Key electrical characteristics include a maximum collector-emitter saturation voltage (VCE(sat)) of 0.5V at 300mA collector current and 30mA base current. The DC current gain (hFE) ranges from a minimum of 15 at 300mA collector current to 1V collector-emitter voltage, up to 30 at 30mA collector current and 400mV collector-emitter voltage.
This transistor is housed in a compact SOT-23-3 surface mount package, making it suitable for space-constrained designs. The operating temperature range is -55°C to 150°C (TJ), and it has a total power dissipation of 625mW at 25°C ambient temperature.
Switching characteristics include a typical turn-on time of 18ns and a turn-off time of 28ns, with delay, rise, fall, and storage times also specified. The thermal resistance junction-to-case is 83.3°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the MMBT3646 is 15V.
The MMBT3646 can handle a maximum continuous collector current of 300mA.
The MMBT3646 is available in a TO-236-3, SC-59, SOT-23-3 package.
The MMBT3646 operates within a temperature range of -55°C to 150°C (TJ).
The DC current gain (hFE) of the MMBT3646 is a minimum of 30 at 30mA collector current and 400mV collector-emitter voltage.
The typical turn-on time for the MMBT3646 is 18ns.
The typical turn-off time for the MMBT3646 is 28ns.