MMBT3416LT3G The On Semiconductor MMBT3416LT3G is an NPN bipolar transistor designed for general-purpose amplification. It features a 40V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

MMBT3416LT3G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor MMBT3416LT3G is an NPN bipolar transistor designed for general-purpose amplification. It features a 40V collector-emitter voltage and 100mA continuous collector current.
Total Stock: 9,993 pcs
$ Price Range: $0.99

MMBT3416LT3G Available from 1 distributor

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MMBT3416LT3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current (Unspecified condition)
Current Gain (Minimum @ IC = 2.0 mAdc, VCE = 4.0 Vdc, f = 1 kHz)
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ Alumina Substrate, TA = 25 °C)
Power Dissipation (Maximum @ FR -5 Board, TA = 25 °C)
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
current (Maximum @ VCB = 18 Vdc, TA = 100 °C)
current (Maximum @ VCB = 25 Vdc, IE = 0)
current (Maximum @ VEB = 5.0 Vdc, IC = 0)
voltage (@ IC = 50 mAdc, IB = 3.0 mAdc)
voltage (Maximum @ 3 mA, 50 mA)
voltage (Maximum @ IC = 50 mAdc, IB = 3.0 mAdc)
voltage (Minimum @ IE = 100 /C 0109 Adc, IC = 0)
voltage (Unspecified condition)

MMBT3416LT3G Description

Short technical summary and product information.

The MMBT3416LT3G from On Semiconductor is a general-purpose NPN silicon bipolar junction transistor (BJT). It is designed for amplification applications and comes in a compact SOT-23-3 surface mount package.

 

Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of 100mA. The device offers a DC current gain (hFE) ranging from 75 to 225 at 2mA collector current and 4.5V VCE. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 300mV at 50mA collector current and 3mA base current.

 

This transistor operates within a junction and storage temperature range of -55°C to 150°C. It is supplied in a SOT-23-3 (TO-236) package, suitable for surface mounting. The device is RoHS3 compliant, Pb-free, and halogen-free, making it suitable for various electronic designs.

MMBT3416LT3G Quick Information

Product Type: Bipolar Transistor
Canonical Name: MMBT3416LT3G NPN Bipolar Transistor
Subcategory: Single

MMBT3416LT3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MMBT3416LT3G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT3416LT3G Features

  • NPN silicon bipolar transistor
  • 40V collector-emitter voltage
  • 100mA continuous collector current
  • SOT-23-3 surface mount package
  • Pb-free and halogen-free

MMBT3416LT3G Applications

  • Suitable for low-current switching applications.
  • Used in signal amplification circuits.
  • Ideal for general-purpose switching in electronic devices.
  • Applicable in consumer electronics and communication equipment.

MMBT3416LT3G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMBT3416LT3G?

The maximum collector-emitter voltage (VCEO) for the MMBT3416LT3G is 40V.

What is the continuous collector current rating?

The continuous collector current (IC) rating for the MMBT3416LT3G is 100mA.

What is the operating temperature range?

The operating temperature range for the MMBT3416LT3G is -55°C to 150°C.

What package type is the MMBT3416LT3G supplied in?

The MMBT3416LT3G is supplied in a SOT-23-3 (TO-236) package.

Is the MMBT3416LT3G RoHS compliant?

The MMBT3416LT3G is RoHS3 compliant.

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