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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
27,000 pcs
|
27000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Cutoff Current | |
| Collector Cutoff Current | |
| Collector-Base Breakdown Voltage | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Breakdown Voltage | |
| Collector-Emitter Voltage (VCEO) Max | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Breakdown Voltage | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| IC (Maximum) | |
| Input Capacitance | |
| Mounting Type | |
| Operating Temperature | |
| Operating and Storage Temperature Range | |
| Output Capacitance | |
| Pd (Maximum) | |
| Power | |
| Supplier Device Package | |
| TJ (Minimum/Maximum) | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| VBE(sat) (Maximum @ IC = -150 mA, IB = -15 mA) | |
| VBE(sat) (Maximum @ IC = -500 mA, IB = -50 mA) | |
| VCE(sat) (Maximum @ IC =500 mA, IB =50 mA) | |
| VCE(sat) (Maximum) | |
| Vce Sat (Maximum @ IC=150 mA, IB=15 mA) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| fT (Typical) | |
| hFE (Minimum @ IC = -1.0 mA, VCE = -10 V) | |
| hFE (Minimum @ IC = 150 mA, VCE = 10 V) | |
| hFE (Minimum @ IC=500 mA, VCE=10 V) | |
| hfe (Minimum @ IC=10 mA, VCE=10 V) | |
| hfe (Minimum @ IC=100 µA, VCE=10 V) | |
| hfe (Minimum/Maximum) |
The MMBT2907AT-7-F from Diodes Incorporated is a PNP bipolar junction transistor (BJT) suitable for small signal applications. It features a collector-emitter voltage (VCEO) of -60V and a continuous collector current (IC) of up to 600mA.
Key electrical characteristics include a DC current gain (hFE) ranging from 30 to 300 depending on the operating conditions, and a gain-bandwidth product (fT) of 200MHz. The transistor is designed for surface mounting and comes in an ultra-small SOT-523 package.
This device operates within a temperature range of -55°C to +150°C. It is constructed with epitaxial planar die construction and has complementary NPN types available. The MMBT2907AT-7-F is also available in a lead-free version.
Mechanical data indicates the SOT-523 package has dimensions suitable for compact designs. The terminals are solderable per MIL-STD-202, Method 208. This transistor is a reliable component for various electronic circuits requiring PNP amplification or switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MMBT2907AT-7-F is -60V.
The continuous collector current (IC) rating for the MMBT2907AT-7-F is 600mA.
The operating and storage temperature range for the MMBT2907AT-7-F is -55°C to +150°C.
The MMBT2907AT-7-F is supplied in a SOT-523 package.
The gain-bandwidth product (fT) of the MMBT2907AT-7-F is 200MHz.