| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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| Vce Saturation (Max) |
The Infineon MMBT2907ALT1HTSA1 is a PNP bipolar junction transistor (BJT) suitable for various electronic applications. It offers a collector-emitter breakdown voltage of 60V and can handle a maximum continuous collector current of 600mA.
This transistor operates with a maximum power dissipation of 330mW and has a transition frequency of 200MHz. The DC current gain (hFE) is a minimum of 100 at 150mA and 10V. Its saturation voltage (Vce) is a maximum of 1.6V at 50mA and 500mA.
The MMBT2907ALT1HTSA1 is housed in a surface-mount PG-SOT23 package, also known as TO-236-3, SC-59, or SOT-23-3. It is designed for surface mounting and is supplied in tape and reel packaging.
This component operates within a temperature range of -55°C to 150°C (TJ). The RoHS status is reported as RoHS3 Compliant, and the Moisture Sensitivity Level (MSL) is 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
It is a PNP Bipolar Junction Transistor (BJT).
The maximum Vce is 60V.
The maximum Ic is 600mA.
The maximum power dissipation is 330mW.
The transition frequency is 200MHz.
The maximum operating temperature is 150°C.
It is available in a SOT-23 surface-mount package (TO-236-3, SC-59, SOT-23-3).