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The MMBT2907ALT1G from ON Semiconductor is a PNP silicon bipolar junction transistor. It is designed for general-purpose applications and comes in a compact SOT-23-3 surface-mount package.
Key electrical characteristics include a collector-emitter voltage (VCEO) of up to 60V and a continuous collector current (IC) of 600mA. The device offers a DC current gain (hFE) of 100 minimum at 150mA and 10V, and a collector-emitter saturation voltage (VCE(sat)) of 1.6V maximum at 50mA and 500mA. Its operating frequency is up to 200MHz.
Thermal specifications include a total power dissipation of 300mW at 25°C ambient temperature when mounted on an alumina substrate, with a junction-to-ambient thermal resistance of 417°C/W. The operating and storage temperature range is -55°C to +150°C.
This transistor is Pb-free and Halogen-free, meeting RoHS compliance. Its SOT-23-3 (TO-236) package is suitable for surface mounting, making it a versatile component for various electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating (VCEO) is 60V.
The continuous collector current (IC) is 600mA.
The operating and storage temperature range is -55°C to +150°C.
The MMBT2907ALT1G is supplied in a SOT-23-3 (TO-236) package.
Yes, the MMBT2907ALT1G is RoHS3 compliant.