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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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14,396 pcs
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14396 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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6,587 pcs
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6587 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,739 pcs
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2739 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,205 pcs
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2205 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-04-21 11:15:10 | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,718 pcs
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1718 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Breakdown Voltage (Minimum @ IC = 1.0 mAdc, IB = 0) | |
| Breakdown Voltage (Minimum @ IC = 10 /C 0109 Adc, IE = 0) | |
| Breakdown Voltage (Minimum @ IE = 10 /C 0109 Adc, IC = 0) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Junction and Storage Temperature | |
| Leakage Current (Maximum @ VCB = -50 Vdc, IE = 0) | |
| Leakage Current (Maximum @ VCE = -30 Vdc, VEB(off) = -0.5 Vdc) | |
| Mounting Type | |
| Pb-Free | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance | |
| Total Device Dissipation | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| current (Maximum @ ICM) |
The MMBT2907ALT1 is a PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor. This device is designed for general-purpose applications and features a maximum collector-emitter voltage (VCEO) of -60V and a continuous collector current (IC) of -600mA.
Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a Vce saturation voltage of 1.6V at 50mA and 500mA. The transistor operates at frequencies up to 200MHz.
Packaged in a SOT-23-3 surface-mount package, the MMBT2907ALT1 is suitable for various electronic circuits. It is rated for a power dissipation of 225 mW on an FR-5 board at 25°C. The device operates within a junction and storage temperature range of -55°C to +150°C.
Environmental compliance includes Pb-Free and Halogen Free status, with RoHS3 compliance. The Moisture Sensitivity Level (MSL) is 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating (VCEO) for the MMBT2907ALT1 is -60 Vdc.
The continuous collector current (IC) for the MMBT2907ALT1 is -600 mAdc.
The MMBT2907ALT1 is a PNP silicon transistor.
The MMBT2907ALT1 is supplied in a SOT-23-3 (TO-236) package.
The junction and storage temperature range for the MMBT2907ALT1 is -55°C to +150°C.
Yes, the MMBT2907ALT1 is RoHS3 compliant.