MMBT2907ALT1 The MMBT2907ALT1 is a PNP silicon transistor from ON Semiconductor designed for general-purpose applications. It offers a 60V breakdown voltage and 600mA continuous current capability in a compact SOT-23 package.
Mfr Part #:

MMBT2907ALT1

Available from 6 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMBT2907ALT1 is a PNP silicon transistor from ON Semiconductor designed for general-purpose applications. It offers a 60V breakdown voltage and 600mA continuous current capability in a compact SOT-23 package.
Total Stock: 29,645 pcs
$ Price Range: $0.99

MMBT2907ALT1 Available from 6 distributors

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Non-Authorised

MMBT2907ALT1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Breakdown Voltage (Minimum @ IC = 1.0 mAdc, IB = 0)
Breakdown Voltage (Minimum @ IC = 10 /C 0109 Adc, IE = 0)
Breakdown Voltage (Minimum @ IE = 10 /C 0109 Adc, IC = 0)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Junction and Storage Temperature
Leakage Current (Maximum @ VCB = -50 Vdc, IE = 0)
Leakage Current (Maximum @ VCE = -30 Vdc, VEB(off) = -0.5 Vdc)
Mounting Type
Pb-Free
Power
Supplier Device Package
Tape & Reel
Thermal Resistance
Total Device Dissipation
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
current (Maximum @ ICM)

MMBT2907ALT1 Description

Short technical summary and product information.

The MMBT2907ALT1 is a PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor. This device is designed for general-purpose applications and features a maximum collector-emitter voltage (VCEO) of -60V and a continuous collector current (IC) of -600mA.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a Vce saturation voltage of 1.6V at 50mA and 500mA. The transistor operates at frequencies up to 200MHz.

 

Packaged in a SOT-23-3 surface-mount package, the MMBT2907ALT1 is suitable for various electronic circuits. It is rated for a power dissipation of 225 mW on an FR-5 board at 25°C. The device operates within a junction and storage temperature range of -55°C to +150°C.

 

Environmental compliance includes Pb-Free and Halogen Free status, with RoHS3 compliance. The Moisture Sensitivity Level (MSL) is 1.

MMBT2907ALT1 Quick Information

Product Type: PNP Silicon Transistor
Canonical Name: MMBT2907ALT1 PNP Silicon Transistor
Subcategory: Bipolar (BJT) - Single

MMBT2907ALT1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBT2907ALT1 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT2907ALT1 Features

  • PNP silicon bipolar junction transistor.
  • 60V collector-emitter voltage rating.
  • 600mA continuous collector current.
  • SOT-23 surface-mount package.
  • RoHS3, Pb-Free, and Halogen Free compliant.

MMBT2907ALT1 Applications

  • Used in switching applications
  • Suitable for amplification circuits
  • Ideal for compact electronic designs
  • Applicable in automotive and consumer electronics

MMBT2907ALT1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating for the MMBT2907ALT1?

The collector-emitter voltage rating (VCEO) for the MMBT2907ALT1 is -60 Vdc.

What is the continuous collector current for the MMBT2907ALT1?

The continuous collector current (IC) for the MMBT2907ALT1 is -600 mAdc.

What type of transistor is the MMBT2907ALT1?

The MMBT2907ALT1 is a PNP silicon transistor.

What is the package type for the MMBT2907ALT1?

The MMBT2907ALT1 is supplied in a SOT-23-3 (TO-236) package.

What is the operating temperature range for the MMBT2907ALT1?

The junction and storage temperature range for the MMBT2907ALT1 is -55°C to +150°C.

Is the MMBT2907ALT1 RoHS compliant?

Yes, the MMBT2907ALT1 is RoHS3 compliant.

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