MMBT2907A_R1_00001 The Panjit MMBT2907A_R1_00001 is a PNP bipolar transistor designed for general purpose switching applications. It features a 60V collector-emitter voltage and a 600mA collector current.
Mfr Part #:

MMBT2907A_R1_00001

Available from 1 distributors
Mfr Name: PANJIT
PANJIT
The Panjit MMBT2907A_R1_00001 is a PNP bipolar transistor designed for general purpose switching applications. It features a 60V collector-emitter voltage and a 600mA collector current.
Total Stock: 1,800 pcs
$ Price Range: $0.99

MMBT2907A_R1_00001 Available from 1 distributor

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MMBT2907A_R1_00001 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Frequency
IC (Maximum)
Mounting Type
Operating Temperature
Power
Power Dissipation
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMBT2907A_R1_00001 Description

Short technical summary and product information.

The Panjit MMBT2907A_R1_00001 is a PNP epitaxial silicon planar design transistor suitable for general purpose switching applications. It offers a collector-emitter voltage of up to -60V and a continuous collector current of -600mA.

 

Key electrical characteristics include a Vce saturation of 1.6V at 50mA/500mA and a DC current gain (hFE) of 100 minimum at 150mA/10V. The transistor operates at frequencies up to 200MHz.

 

With a power dissipation rating of 225mW, it is housed in a compact SOT-23 surface mount package. The operating temperature range is -55°C to 150°C.

 

This component is designed for various electronic circuits requiring a reliable PNP switching transistor. Its specifications make it suitable for applications where moderate voltage and current handling are necessary.

MMBT2907A_R1_00001 Quick Information

Product Type: Bipolar Transistor
Canonical Name: MMBT2907A PNP General Purpose Switching Transistor
Subcategory: Single

MMBT2907A_R1_00001 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead free

MMBT2907A_R1_00001 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT2907A_R1_00001 Features

  • PNP bipolar transistor for general purpose switching.
  • 60V collector-emitter breakdown voltage.
  • 600mA continuous collector current.
  • 225mW power dissipation.
  • Compact SOT-23 surface mount package.

MMBT2907A_R1_00001 Applications

  • Suitable for general purpose switching.
  • Used in low-power electronic circuits.
  • Ideal for signal amplification tasks.
  • Component in power supply circuits.

MMBT2907A_R1_00001 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage (Vceo) for the MMBT2907A_R1_00001?

The collector-emitter breakdown voltage is 60V.

What is the maximum continuous collector current (Ic) for this PNP transistor?

The maximum continuous collector current is 600mA.

What is the power dissipation rating of the MMBT2907A_R1_00001?

The power dissipation is 225mW.

What is the operating temperature range for this transistor?

The operating temperature range is -55°C to 150°C.

What package type is the MMBT2907A_R1_00001 supplied in?

It is supplied in a SOT-23 surface mount package.

What is the DC current gain (hFE) of the MMBT2907A_R1_00001?

The minimum DC current gain (hFE) is 100 at 150mA collector current and 10V collector-emitter voltage.

What is the saturation voltage (Vce(sat)) for the MMBT2907A_R1_00001?

The Vce(sat) is 1.6V at 500mA collector current and 50mA base current.

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