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The MMBT2907A-7-F from Diodes Incorporated is a PNP epitaxial planar die construction transistor. It is suitable for low power amplification and switching applications.
This transistor features a collector-emitter voltage of 60V and a continuous collector current of 600mA. It has a gain bandwidth product of 200MHz and a maximum power dissipation of 300mW. The operating temperature range is from -55°C to 150°C.
The device is housed in a SOT-23-3 surface mount package. It is RoHS 3 compliant, lead-free, and halogen-free, meeting high reliability standards.
Its complementary NPN type is the MMBT2222A. This transistor is qualified to AEC-Q101 standards for high reliability and is PPAP capable.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating is 60V.
The maximum continuous collector current is 600mA.
The gain bandwidth product is 200MHz.
The operating temperature range is -55°C to 150°C.
The MMBT2907A-7-F is supplied in a SOT-23-3 surface mount package.
Yes, the MMBT2907A-7-F is RoHS 3 compliant.
The Moisture Sensitivity Level is 1.