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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,157 pcs
|
1157 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
618 pcs
|
618 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Cutoff Current | |
| Collector Cutoff Current | |
| Collector-Base Breakdown Voltage | |
| Collector-Base Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| Current-Gain - Bandwidth Product | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Delay Time | |
| Emitter-Base Breakdown Voltage | |
| Emitter-Base Voltage | |
| Fall Time | |
| IC | |
| ICBO (@ VCB = 50 V, IE = 0) | |
| ICBO (@ VCB = 50 V, IE = 0, TA = 150 °C) | |
| Input Capacitance | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Operating and Storage Junction Temperature Range | |
| Output Capacitance | |
| PD (@ TA= 25 °C) | |
| PD (Unspecified condition) | |
| Pd (Maximum @ Ta=25 °C) | |
| Power | |
| Rise Time | |
| Storage Time | |
| Supplier Device Package | |
| Supplier Package | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Turn Off Time | |
| Turn On Time | |
| VBE(sat) (@ IC = 150 mA, IB = 15 mA) | |
| VBE(sat) (@ IC = 500 mA, IB = 50 mA) | |
| VCE(sat) (@ IC = 150 mA, IB = 15 mA) | |
| VCE(sat) (Maximum @ IC =500 mA, IB =50 mA) | |
| VCEO | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hFE (Minimum @ IC = -0.1 mA, VCE = -10 V) | |
| hFE (Minimum @ IC = -1.0 mA, VCE = -10 V) | |
| hFE (Minimum @ IC = 150 mA, VCE = 10 V) | |
| hFE (Minimum @ IC=500 mA, VCE=10 V) | |
| hfe (Minimum @ IC=10 mA, VCE=10 V) |
The MMBT2907 is a general-purpose PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is designed for applications requiring collector currents up to 800 mA and features a collector-emitter voltage rating of 40V.
Key electrical characteristics include a DC current gain (hFE) of at least 100 at 150mA and 10V, and a collector-emitter saturation voltage (VCE(sat)) of 1.6V maximum at 500mA and 50mA base current. The transistor also offers a current gain-bandwidth product (fT) of 200 MHz.
This device is supplied in a compact SOT-23-3 surface mount package, making it suitable for space-constrained designs. The operating temperature range is -55°C to +150°C.
With its robust specifications and small footprint, the MMBT2907 is well-suited for various amplification and switching tasks in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MMBT2907 transistor has a continuous collector current rating of 800 mA.
The MMBT2907 has a collector-emitter voltage rating of 40 V.
The MMBT2907 operates in a temperature range of -55°C to +150°C.
The MMBT2907 is supplied in a SOT-23-3 package.
The minimum DC current gain (hFE) for the MMBT2907 at 150mA and 10V is 100.
The turn-on time for the MMBT2907 transistor is 45 ns.
The fall time for the MMBT2907 transistor is 30 ns.