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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
290,000 pcs
|
290000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter On Voltage | |
| Breakdown Voltage (Minimum @ IC = 10 /C 0109 Adc, IE = 0) | |
| Breakdown Voltage (Minimum @ IC = 10 mAdc, IB = 0) | |
| Breakdown Voltage (Minimum @ IE = 10 /C 0109 Adc, IC = 0) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Gain-Bandwidth Product | |
| Halogen Free | |
| Leakage Current (Maximum @ VCB = 45 Vdc, IE = 0) | |
| Leakage Current (Maximum @ VEB = 5.0 Vdc, IC = 0) | |
| Mounting Type | |
| Noise Figure | |
| Operating Temperature | |
| Pb-Free | |
| Power | |
| Power Dissipation (Maximum @ Alumina Substrate, TA = 25 °C) | |
| Power Dissipation (Maximum @ FR -5 Board, TA = 25 °C) | |
| Power Dissipation (Maximum) | |
| Saturation Voltage (Maximum @ IC = 1.0 mAdc, IB = 0.1 mAdc) | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| capacitance (Maximum @ VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) | |
| capacitance (Maximum @ VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) | |
| gain (Maximum @ IC = 10 mAdc, VCE = 5.0 Vdc) | |
| gain (Minimum @ IC = 1.0 mAdc, VCE = 5.0 Vdc) |
The MMBT2484LT3G is a low-noise NPN silicon transistor manufactured by ON Semiconductor. It is designed for applications requiring a reliable and versatile bipolar junction transistor. Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 100mA.
This transistor offers a DC current gain (hFE) ranging from a minimum of 250 at 1mA, 5V to a maximum of 800 at 10mA, 5V. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 0.35V at 100µA base current and 1mA collector current. It also features a base-emitter on-voltage (VBE(on)) of 0.95V maximum at 1mA, 5V.
Packaged in a compact SOT-23-3 (TO-236) surface-mount package, the MMBT2484LT3G is suitable for space-constrained designs. It operates within a temperature range of -55°C to 150°C. The device is Pb-free and halogen-free, meeting RoHS 3 compliance standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MMBT2484LT3G is 60 Vdc.
The continuous collector current (IC) for the MMBT2484LT3G is 100 mAdc.
The minimum DC current gain (hFE) at 1mA collector current and 5V collector-emitter voltage is 250.
The maximum collector-emitter saturation voltage (VCE(sat)) is 0.35 Vdc.
The junction and storage temperature range for the MMBT2484LT3G is -55°C to 150°C.
The MMBT2484LT3G is supplied in a SOT-23-3 (TO-236) surface-mount package.