MMBT2369LT3G The On Semiconductor MMBT2369LT3G is an NPN bipolar transistor designed for switching applications. It offers a 15V collector-emitter voltage and 200mA continuous collector current.
Mfr Part #:

MMBT2369LT3G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor MMBT2369LT3G is an NPN bipolar transistor designed for switching applications. It offers a 15V collector-emitter voltage and 200mA continuous collector current.
Total Stock: 190,000 pcs
$ Price Range: $0.99

MMBT2369LT3G Available from 1 distributor

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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190,000 pcs
190000 pcs On Request 1 On Request On Request On Request On Request On Request

MMBT2369LT3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Operating Temperature
Operating Voltage (Minimum @ IC = 10 /C 0109 Adc, IE = 0)
Operating Voltage (Minimum @ IC = 10 /C 0109 Adc, VBE = 0)
Operating Voltage (Minimum @ IC = 10 mAdc, IB = 0)
Operating Voltage (Minimum @ IE = 10 /C 0109)
Pb-Free
Power
Power Dissipation (Maximum @ TA = 25 °C, Alumina Substrate)
Power Dissipation (Maximum @ TA = 25 °C, FR -5 Board)
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMBT2369LT3G Description

Short technical summary and product information.

The MMBT2369LT3G from On Semiconductor is an NPN silicon bipolar junction transistor (BJT) suitable for switching applications. It features a maximum collector-emitter voltage (VCEO) of 15V and a continuous collector current (IC) of 200mA.

 

This transistor is designed for surface mount applications and comes in a compact SOT-23-3 (TO-236) package. It operates across a wide temperature range from -55°C to 150°C (TJ).

 

Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 10mA and a Vce saturation of 250mV maximum at 1mA/10mA. The device has a total power dissipation rating of 225mW on an FR-5 board and 300mW on an alumina substrate at 25°C.

 

The MMBT2369LT3G is Pb-free and halogen-free, complying with RoHS standards. It is supplied in tape and reel packaging with a standard quantity of 3000 units.

MMBT2369LT3G Quick Information

Product Type: NPN Bipolar Transistor
Canonical Name: MMBT2369LT3G NPN Bipolar Transistor
Subcategory: Single

MMBT2369LT3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBT2369LT3G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT2369LT3G Features

  • NPN silicon bipolar junction transistor.
  • 15V collector-emitter voltage rating.
  • 200mA continuous collector current.
  • Surface mount SOT-23-3 package.
  • Wide operating temperature range.

MMBT2369LT3G Applications

  • Used in switching circuits
  • Suitable for low-voltage amplification
  • Ideal for compact electronic devices
  • Applicable in signal amplification

MMBT2369LT3G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating for the MMBT2369LT3G?

The collector-emitter breakdown voltage is 15 Vdc.

What is the maximum continuous collector current for this transistor?

The maximum continuous collector current is 200 mAdc.

What is the operating temperature range of the MMBT2369LT3G?

The operating temperature range is -55°C to 150°C.

What package type is the MMBT2369LT3G supplied in?

The MMBT2369LT3G is supplied in a SOT-23-3 package.

Is the MMBT2369LT3G RoHS compliant?

Yes, the MMBT2369LT3G is RoHS3 Compliant.

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