MMBT2369ALT1G The On Semiconductor MMBT2369ALT1G is an NPN bipolar junction transistor designed for surface mount applications. It offers a 15V collector-emitter voltage and 200mA continuous collector current.
Mfr Part #:

MMBT2369ALT1G

Available from 9 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor MMBT2369ALT1G is an NPN bipolar junction transistor designed for surface mount applications. It offers a 15V collector-emitter voltage and 200mA continuous collector current.
✓ Total Stock: 152,721 pcs
$ Price Range: $0.16

MMBT2369ALT1G Available from 9 distributors

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MMBT2369ALT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMBT2369ALT1G Description

Short technical summary and product information.

The MMBT2369ALT1G from On Semiconductor is an NPN silicon bipolar junction transistor (BJT) suitable for various switching applications. It is housed in a compact SOT-23-3 surface mount package, making it ideal for space-constrained designs.

 

Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 15V and a continuous collector current (IC) of 200mA. The transistor exhibits a minimum DC current gain (hFE) of 20 at 100mA and 1V, with a Vce saturation of 500mV at 10mA collector current and 100mA base current. The maximum power dissipation is rated at 225mW.

 

Operating temperature ranges from -55°C to 150°C (TJ). The device is designed for surface mounting, utilizing the SOT-23-3 package. This transistor is part of a series that may include automotive-qualified options, indicated by an 'S' prefix, and is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

MMBT2369ALT1G Quick Information

Product Type: NPN Transistor
Canonical Name: MMBT2369ALT1G NPN Bipolar Junction Transistor
Subcategory: NPN

MMBT2369ALT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBT2369ALT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT2369ALT1G Features

  • NPN silicon bipolar junction transistor.
  • 15V collector-emitter voltage rating.
  • 200mA continuous collector current.
  • 225mW maximum power dissipation.
  • Surface mount SOT-23-3 package.

MMBT2369ALT1G Applications

  • Suitable for low-voltage switching applications.
  • Used in signal amplification circuits.
  • Ideal for automotive and industrial electronics.
  • Applicable in power management and control circuits.

MMBT2369ALT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMBT2369ALT1G?

The maximum collector-emitter voltage (VCEO) for the MMBT2369ALT1G is 15 Vdc.

What is the continuous collector current rating of the MMBT2369ALT1G?

The MMBT2369ALT1G has a continuous collector current (IC) rating of 200 mAdc.

What is the operating temperature range for this transistor?

The operating temperature range for the MMBT2369ALT1G is -55°C to 150°C (TJ).

What package type is the MMBT2369ALT1G supplied in?

The MMBT2369ALT1G is supplied in a SOT-23-3 (TO-236) surface mount package.

What is the RoHS compliance status of the MMBT2369ALT1G?

The MMBT2369ALT1G is RoHS3 Compliant.

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