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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
9,953 pcs
|
9953 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request | |||||||||
|
1,045 pcs
|
1045 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |||||||||
|
20 pcs
$0.04
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20 pcs |
$0.04
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1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base - Emitter Saturation Voltage | |
| Breakdown Voltage (Minimum @ IC = 10 mA, IB = 0) | |
| Breakdown Voltage (Minimum @ IC = 10 µA, IE = 0) | |
| Breakdown Voltage (Minimum @ IE = -10 A, IC = 0) | |
| Collector Cutoff Current | |
| Collector Emitter Saturation Voltage (Maximum @ IC = 10 mA, IB = 1.0 mA) | |
| Collector-Emitter Saturation Voltage (Maximum @ IC=-100 mA, IB=-10 mA) | |
| Current | |
| DC Current Gain (Minimum @ IC = 10 mA, VCE = 1.0 V) | |
| DC Current Gain (Minimum @ IC = 100 mA, VCE = 1.0 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Input Capacitance | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Power | |
| Small-Signal Current Gain | |
| Storage Time | |
| Supplier Device Package | |
| Transistor Type | |
| Turn On Time | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MMBT2369A is an NPN switching transistor manufactured by ON Semiconductor, designed for high-speed saturated switching applications. It operates with a collector-emitter voltage of up to 15V and can handle a continuous collector current of 200mA.
Key electrical characteristics include a maximum power dissipation of 225mW and a DC current gain (hFE) of at least 40 at 10mA collector current and 1V VCE. The collector-emitter saturation voltage is a maximum of 500mV at 10mA IB and 100mA IC. The device operates over a wide temperature range from -55°C to +150°C.
This transistor is housed in a compact SOT-23-3 surface-mount package, making it suitable for space-constrained designs. Its high-speed switching capabilities are further demonstrated by a storage time of 13ns and a turn-on time of 12ns.
The MMBT2369A is ideal for applications requiring fast switching performance in a small form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MMBT2369A is 15V.
The MMBT2369A has a continuous collector current rating of 200mA.
The maximum power dissipation for the MMBT2369A is 225mW.
The MMBT2369A operates between -55°C and +150°C.
The MMBT2369A is available in a SOT-23-3 package.
The DC current gain (hFE) is a minimum of 40 at 10mA collector current and 1V VCE.
The storage time is 13ns and the turn-on time is 12ns.