MMBTA55LT1G
On Semiconductor
The MMBTA55LT1G is a PNP bipolar junction transistor from ON Semiconductor. It offers a 60V collector-emitter voltage and 500mA continuous collector current.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,910 pcs
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3910 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,570 pcs
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1570 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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The MMBT2222LT1 is a general-purpose NPN silicon transistor manufactured by ON Semiconductor. It is housed in a compact SOT-23 surface-mount package, making it suitable for various electronic circuits where space is a constraint.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 30V and a continuous collector current (IC) of 600mA. The transistor also has a peak collector current of 1100mA and a maximum collector-base voltage (VCBO) of 60V.
This device is Pb-free, halogen-free, and BFR-free, adhering to RoHS compliance standards. The operating temperature range is from -55°C to +150°C. Its SOT-23 package and general-purpose nature make it a versatile component for switching and amplification tasks in electronic designs.
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 40 Vdc for certain variants and 30 Vdc for others.
It comes in a SOT-23-3 surface-mount package.
The maximum collector current is 600 mA.
It operates within a temperature range of -55°C to +150°C.
Yes, it is RoHS3 compliant.