| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,660 pcs
|
9660 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MMBT2222AWT3G is an NPN silicon transistor designed for general purpose amplifier applications by ON Semiconductor. It is housed in a compact SOT-323/SC-70 surface mount package, making it suitable for low power applications.
Key electrical specifications include a maximum collector-emitter voltage of 40Vdc and a continuous collector current of 600mAdc. The device offers a DC current gain (hFE) of 100 minimum at 150mA and 10V. Its maximum collector-emitter saturation voltage is 1Vdc at 500mA collector current and 50mA base current. The transistor operates at frequencies up to 300MHz.
Thermal characteristics include a total device dissipation of 150mW on an FR-5 board at 25°C. The operating temperature range is -55°C to 150°C (TJ). The MMBT2222AWT3G is AEC-Q101 qualified and RoHS compliant.
This transistor is ideal for various amplifier circuits and general-purpose switching applications where a small, surface-mount component is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 40 Vdc.
The continuous collector current rating is 600 mAdc.
The minimum DC current gain (hFE) at 150mA and 10V is 100.
The operating temperature range is -55°C to 150°C.
The MMBT2222AWT3G is supplied in the SC-70, SOT-323 package.
Yes, the MMBT2222AWT3G is RoHS3 Compliant.