Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 612 | On Request | On Request | |
|
2,209 pcs
|
2209 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Breakdown Voltage (Minimum @ IC = 10 /C 0109 Adc, IE = 0) | |
| Breakdown Voltage (Minimum @ IC = 10 mAdc, IB = 0) | |
| Breakdown Voltage (Minimum @ IE = 10 /C 0109 Adc, IC = 0) | |
| Collector-Emitter Voltage | |
| Current | |
| DC Current Gain (Maximum @ IC = 500 mAdc, VCE = 10 Vdc) | |
| DC Current Gain (Minimum @ IC = 0.1 mAdc, VCE = 10 Vdc) | |
| DC Current Gain (Minimum @ IC = 1.0 mAdc, VCE = 10 Vdc) | |
| DC Current Gain (Minimum @ IC = 10 mAdc, VCE = 10 Vdc) | |
| DC Current Gain (Minimum @ IC = 150 mAdc, VCE = 10 Vdc) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Junction and Storage Temperature | |
| Leakage Current (Maximum @ VCE = 60 Vdc, VEB = 3.0 Vdc) | |
| Mounting Type | |
| Pb-Free | |
| Power | |
| Power Dissipation (Maximum @ FR -5 Board, TA = 25 °C) | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Reverse Voltage (Maximum) | |
| Saturation Voltage (Maximum @ IC = 500 mAdc, IB = 50 mAdc) | |
| Saturation Voltage (Minimum/Maximum @ IC = 150 mAdc, IB = 15 mAdc) | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance Junction-to-Ambient | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MMBT2222AWT1 is an NPN silicon transistor manufactured by ON Semiconductor, suitable for general-purpose amplifier applications. It is housed in a compact SOT-323 (SC-70) surface-mount package, designed for low-power applications.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of 600mA. The device offers a minimum DC current gain (hFE) of 100 at 150mA and 10V. Its maximum power dissipation is rated at 150mW at 25°C ambient temperature on an FR-5 board.
This transistor is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. It is also Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
The MMBT2222AWT1 is designed for surface mounting, utilizing the SOT-323/SC-70 package. It operates within a junction and storage temperature range of -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MMBT2222AWT1 is 40 Vdc.
The continuous collector current (IC) rating for the MMBT2222AWT1 is 600 mAdc.
The power dissipation (PD) is 150 mW at 25°C ambient temperature on an FR-5 board.
The minimum DC current gain (hFE) at 150mA and 10V is 100.
The MMBT2222AWT1 is supplied in a SC-70, SOT-323 package.
Yes, the MMBT2222AWT1 is AEC-Q101 Qualified and PPAP Capable.
The junction and storage temperature range is -55 to +150 °C.