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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
61,007 pcs
|
61007 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
3,480 pcs
|
3480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
451 pcs
|
451 pcs | On Request | 1 | On Request | On Request | /+ | On Request | On Request | |
|
385 pcs
|
385 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (Minimum @ 0.1 mAdc, 10 Vdc) | |
| DC Current Gain (Minimum @ 1.0 mAdc, 10 Vdc) | |
| DC Current Gain (Minimum @ 10 mAdc, 10 Vdc) | |
| DC Current Gain (Minimum @ 150 mA, 10 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Frequency - Transition | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Operating and Storage Junction Temperature Range | |
| Pb-Free | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vbe Saturation (Maximum @ 500 mAdc, 50 mAdc) | |
| Vbe Saturation (Minimum @ 150 mAdc, 15 mAdc) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Vce Saturation (Maximum @ 150 mAdc, 15 mAdc) | |
| Vce Saturation (Maximum @ 50 mA, 500 mA) | |
| Vce Saturation (Maximum @ 500 mAdc, 50 mAdc) | |
| Voltage |
The MMBT2222ATT1G from ON Semiconductor is an NPN silicon bipolar junction transistor (BJT) suitable for general-purpose amplifier applications. It is housed in a compact SOT-416/SC-75 surface-mount package, designed for low-power applications.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of up to 600mA. The device offers a minimum DC current gain (hFE) of 100 at 150mA and 10V. Saturation voltages are specified as VCE(sat) of 1V maximum at 500mA collector current and 50mA base current, and VBE(sat) of 1.2V maximum under the same conditions.
This transistor operates within a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 150mW at 25°C ambient temperature. The device is Pb-free and Halogen-free, complying with RoHS standards.
Its small footprint and surface-mount capability make it ideal for space-constrained designs. The MMBT2222ATT1G is a reliable choice for various amplification and switching tasks in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the MMBT2222ATT1G is 40 Vdc.
The maximum continuous collector current (IC) for the MMBT2222ATT1G is 600 mAdc.
The operating and storage junction temperature range for the MMBT2222ATT1G is -55°C to +150°C.
The MMBT2222ATT1G is supplied in the SOT-416/SC-75 package.
Yes, the MMBT2222ATT1G is RoHS3 Compliant.
The minimum DC current gain (hFE) for the MMBT2222ATT1G at 150mA and 10V is 100.
The maximum collector-emitter saturation voltage (VCE(sat)) at 500mA collector current and 50mA base current is 1.0 Vdc.