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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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6,143 pcs
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6143 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |||||||||
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2,821 pcs
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2821 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |||||||||
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1,750 pcs
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1750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |||||||||
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1,115 pcs
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1115 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |||||||||
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1,000 pcs
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1000 pcs | On Request | 1000 | On Request | On Request | On Request | On Request | On Request | |||||||||
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654 pcs
$0.03
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654 pcs |
$0.03
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1 | On Request | On Request | On Request | On Request | On Request | |||||||||
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164 pcs
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164 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |||||||||
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current Gain (Typical @ V_CE=10 V, I_C=10 mA) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Gain-Bandwidth Product (fT) | |
| Halogen Free | |
| Junction Temperature | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Maximum @ T_loc=25 °C) | |
| Saturation Voltage (Maximum @ I_C=500 mA, I_B=50 mA) | |
| Supplier Device Package | |
| Supplier Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MMBT2222A is a single NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor. It is designed for control and signal processing applications and is housed in a compact SOT-23-3 surface mount package.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of 600mA. The transistor offers a typical DC current gain (hFE) of 375 at 10V and 10mA, and a maximum power dissipation of 250mW at 25°C ambient temperature. Its junction temperature can reach up to 150°C.
The MMBT2222A features a typical gain bandwidth product (fT) of 250MHz at 20mA and 20V, indicating its suitability for high-frequency signal amplification. The saturation voltage (VCEsat) is a maximum of 1000mV at 500mA collector current and 50mA base current.
This transistor is suitable for industrial grade applications and is RoHS compliant. Its surface mount package makes it ideal for automated assembly processes on printed circuit boards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MMBT2222A is 40V.
The MMBT2222A can handle a continuous collector current (IC) of up to 600mA.
The typical DC current gain (hFE) for the MMBT2222A is 375 at a collector-emitter voltage of 10V and a collector current of 10mA.
The MMBT2222A has a maximum junction temperature of 150°C.
The MMBT2222A is supplied in a SOT-23-3 surface mount package.
Yes, the MMBT2222A is RoHS3 compliant.