| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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150 pcs
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150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
36 pcs
|
36 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation | |
| Supplier Device Package | |
| Supplier Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MMBT2222A from Diotec Semiconductor is a single NPN bipolar junction transistor (BJT) housed in a compact SOT-23-3 surface-mount package. This device is designed for control and signal processing applications, featuring a collector-emitter voltage (Vceo) of 40V and a continuous collector current (Ic) of up to 600mA. Its power dissipation is rated at 250mW.
Key electrical characteristics include a typical DC current gain (hFE) of 375 at 10V Vce and 10mA Ic, and a maximum collector saturation voltage (Vcesat) of 1V at 500mA Ic and 50mA Ib. The transistor exhibits a gain bandwidth product (ft) of 250MHz at 20mA Ic and 20V Vce, making it suitable for various switching and amplification tasks.
The operating temperature range for the MMBT2222A is -55°C to 150°C (TJ). It is supplied in a SOT-23-3 package, suitable for automated assembly processes. The component is RoHS compliant and lead-free.
This transistor is well-suited for industrial, mobility, energy, and consumer electronics applications requiring reliable switching and amplification performance in a small form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vceo) of the MMBT2222A transistor is 40V.
The MMBT2222A can handle a continuous collector current (Ic) of 600mA.
The power dissipation (Pd) of the MMBT2222A transistor is 250mW.
The MMBT2222A transistor operates within a temperature range of -55°C to 150°C (TJ).
The MMBT2222A transistor is supplied in a SOT-23-3 package.
Yes, the MMBT2222A transistor is RoHS3 compliant.