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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
196 pcs
|
196 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Capacitance | |
| Collector Current (DC) | |
| Collector-Base Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Delay Time | |
| Emitter Capacitance | |
| Emitter Cut-off Current | |
| Emitter-Base Voltage | |
| Fall Time | |
| Frequency | |
| ICBO (Maximum @ IE = 0, VCB = 60 V) | |
| ICBO (Maximum @ IE = 0; VCB = 60 V; Tj = 125 °C) | |
| Junction Temperature | |
| Mounting Type | |
| Noise Figure | |
| Operating Ambient Temperature | |
| Operating Temperature | |
| Peak Base Current | |
| Peak Collector Current | |
| Power | |
| Rise Time | |
| Storage Temperature | |
| Storage Time | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Thermal Resistance Junction-to-Ambient | |
| Total Power Dissipation | |
| Transistor Type | |
| Transition Frequency | |
| Turn Off Time | |
| Turn On Time | |
| VBEsat (@ IC = 150 mA; IB = 15 mA; note 1) | |
| VBEsat (Maximum @ IC = 500 mA; IB = 50 mA; note 1) | |
| VCEsat (Maximum @ IC = 150 mA; IB = 15 mA; note 1) | |
| VCEsat (Maximum @ IC = 500 mA; IB = 50 mA; note 1) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hFE (@ IC = 150 mA; VCE = 10 V) | |
| hFE (Minimum @ IC = -0.1 mA, VCE = -10 V) | |
| hFE (Minimum @ IC = 10 mA; VCE = 10 V; Tamb = −55 °C) | |
| hFE (Minimum @ IC = 150 mA; VCE = 1 V) | |
| hFE (Minimum @ IC=1 mA, VCE=10 V) | |
| hFE (Minimum @ IC=500 mA, VCE=10 V) | |
| hfe (Minimum @ IC=10 mA, VCE=10 V) |
The MMBT2222A,215 from NXP Semiconductors is an NPN bipolar junction transistor (BJT) suitable for switching and linear amplification tasks. This component is housed in a compact SOT23 plastic package, making it ideal for surface mount applications.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of 600mA. It offers a transition frequency (fT) of 300MHz, indicating good high-frequency performance. The transistor also exhibits a typical DC current gain (hFE) of 100 to 300 at 150mA and 10V.
With a power dissipation rating of 250mW at 25°C ambient temperature (on an FR4 PCB), and operating temperature range from -65°C to +150°C, the MMBT2222A,215 is designed for a variety of environmental conditions. Its PNP complement is the PMBT2907A.
This transistor is mounted using the surface mount technique and comes in a TO-236-3, SC-59, SOT-23-3 package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MMBT2222A,215 is 40V.
The continuous collector current (IC) for the MMBT2222A,215 is 600mA.
The transition frequency (fT) of the MMBT2222A,215 is 300MHz.
The MMBT2222A,215 is supplied in a TO-236-3, SC-59, SOT-23-3 package.
The operating ambient temperature range for the MMBT2222A,215 is -65°C to +150°C.