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2,364 pcs
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2364 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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The MMBT2222A is an NPN switching transistor designed for applications requiring both switching and linear amplification. It is packaged in a compact SOT23 plastic surface-mount package, making it suitable for space-constrained designs.
This transistor features a high collector current capability of up to 600 mA and a maximum collector-emitter voltage of 40 V. Key electrical characteristics include a DC current gain (hFE) ranging from 35 to over 300 depending on the operating conditions. Its switching performance is defined by parameters such as turn-on time (35 ns max), turn-off time (250 ns max), rise time (20 ns max), and fall time (60 ns max).
The MMBT2222A operates within a wide ambient temperature range of -65 °C to +150 °C and has a junction temperature limit of 150 °C. The thermal resistance from junction to ambient is 500 K/W when mounted on an FR4 printed-circuit board.
Its PNP complement is the PMBT2907A. The SOT23 package is ideal for surface mounting, facilitating automated assembly processes.
The maximum DC collector current for the MMBT2222A is 600 mA.
The MMBT2222A has a maximum collector-emitter voltage of 40 V.
The MMBT2222A is supplied in a SOT23 plastic surface-mounted package.
The operating ambient temperature range for the MMBT2222A is -65 °C to +150 °C.
The DC current gain (hFE) of the MMBT2222A is a minimum of 75 at IC = 10 mA and VCE = 10 V.
The turn-on time for the MMBT2222A is a maximum of 35 ns.
The turn-off time for the MMBT2222A is a maximum of 250 ns.