| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,898 pcs
|
9898 pcs | On Request | 1 | On Request | On Request | /+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Junction Temperature | |
| Mounting Type | |
| Power Dissipation | |
| Storage Temperature | |
| Tape & Reel |
This MMBT2222A NPN bipolar transistor from Guangdong Hottech Industrrial Co is designed for control and signal processing applications. It features a maximum collector-emitter voltage (V CEO) of 40V DC and can handle a continuous collector current (I C) of up to 600mA.
The transistor is supplied in a compact SOT-23 surface-mount package, making it suitable for space-constrained designs. It has a power dissipation rating of 0.250W at ambient temperature and a maximum junction temperature of 150°C. The DC current gain (h fe) is typically 375 under specified test conditions.
With a gain bandwidth product (f t) of 250 MHz, this transistor is capable of handling moderate frequency signals. Its saturation voltage (V CEsat) is 1000mV at 500mA collector current and 50mA base current. The component is RoHS compliant and lead-free.
Applications for this transistor include industrial, mobility, energy, and consumer electronics. Its robust specifications and SOT-23 package make it a versatile choice for various signal processing and switching tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (V CEO) for the MMBT2222A is 40V DC.
The MMBT2222A transistor has a continuous collector current (I C) of 600mA.
The MMBT2222A is supplied in a SOT-23 surface-mount package.
The maximum junction temperature (T jmax) for the MMBT2222A is 150°C.
The typical DC current gain (h fe) of the MMBT2222A is 375 at V CE 10V and I C 10mA.
Yes, the MMBT2222A is lead-free.