| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,715 pcs
|
1715 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
700 pcs
|
700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
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This NPN bipolar junction transistor from Diodes Incorporated, part number MMBT2222A-7, is suitable for various electronic applications. It operates with a maximum collector-emitter voltage of 40V and can handle a continuous collector current of up to 600mA. The transistor offers a DC current gain (hFE) of 100 minimum at 150mA and 10V, with a Vce saturation of 1V maximum at 50mA and 500mA.
Designed for surface mounting, the MMBT2222A-7 comes in a compact SOT-23-3 package. It operates within a temperature range of -55°C to 150°C (TJ) and dissipates power up to 310mW. The transistor has a transition frequency of 300MHz, making it suitable for signal amplification and switching tasks.
Environmental compliance includes RoHS3 compliance and an MSL rating of 1 Unlimited. The REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MMBT2222A-7 has a maximum collector-emitter voltage of 40V.
The maximum continuous collector current for the MMBT2222A-7 is 600mA.
The DC current gain (hFE) is a minimum of 100 at 150mA and 10V.
The operating temperature range is -55°C to 150°C (TJ).
The MMBT2222A-7 is supplied in a SOT-23-3 package.
Yes, the MMBT2222A-7 is RoHS3 compliant.