MMBT2222 The ON Semiconductor MMBT2222 is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. It offers a 30V collector-emitter breakdown voltage and a 600mA maximum collector current.
Mfr Part #:

MMBT2222

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MMBT2222 is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. It offers a 30V collector-emitter breakdown voltage and a 600mA maximum collector current.
Total Stock: 3,958 pcs
$ Price Range: $0.99

MMBT2222 Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,068 pcs
2068 pcs On Request 1 On Request On Request 0212 On Request On Request
Non-Authorised Inventory information
1,890 pcs
1890 pcs On Request 1 On Request On Request On Request On Request On Request

MMBT2222 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current Collector (Maximum)
DC Current Gain (Minimum @ 150 mA, 10 V)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Frequency - Transition
Mounting Type
Operating Temperature
Power
Power Dissipation Max (Maximum)
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Voltage Collector Emitter Breakdown (Maximum)

MMBT2222 Description

Short technical summary and product information.

The ON Semiconductor MMBT2222 is a versatile NPN bipolar junction transistor (BJT) suitable for various electronic circuits. It features a collector-emitter breakdown voltage of 30V and can handle a maximum collector current of 600mA. The transistor operates with a DC current gain (hFE) of at least 100 at 150mA and 10V, and its Vce saturation is typically 1.6V at 50mA/500mA.

 

With a transition frequency of 250MHz and a maximum power dissipation of 350mW, the MMBT2222 is well-suited for signal amplification and moderate switching tasks. It is housed in a surface-mount SOT-23-3 package, making it convenient for automated assembly processes. The operating temperature range is from -55°C to 150°C (TJ).

 

This component is RoHS3 compliant, indicating adherence to environmental regulations regarding hazardous substances. Its robust specifications and common package type make it a reliable choice for many industrial and consumer electronics designs.

MMBT2222 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: MMBT2222 NPN Bipolar Junction Transistor
Subcategory: Single

MMBT2222 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBT2222 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT2222 Features

  • NPN bipolar junction transistor.
  • 30V collector-emitter breakdown voltage.
  • 600mA maximum collector current.
  • 250MHz transition frequency.
  • Surface mount SOT-23-3 package.

MMBT2222 Applications

  • General purpose amplification circuits.
  • Signal switching applications.
  • Low to medium power designs.
  • Automated PCB assembly.

MMBT2222 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage for the MMBT2222?

The collector-emitter breakdown voltage is 30V.

What is the maximum continuous collector current for the MMBT2222?

The maximum continuous collector current is 600mA.

What is the DC current gain (hFE) of the MMBT2222?

The minimum DC current gain (hFE) is 100 at 150mA and 10V.

What is the operating temperature range for the MMBT2222?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the MMBT2222 supplied in?

The MMBT2222 is supplied in a surface mount SOT-23-3 package.

Is the MMBT2222 RoHS compliant?

Yes, the MMBT2222 is RoHS3 compliant.

Home
Account

Categories