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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
114,000 pcs
|
114000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Total Power Dissipation | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MMBT2131T1G is a PNP bipolar junction transistor manufactured by On Semiconductor. This general-purpose transistor is designed for various electronic applications.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 30V and a continuous collector current (IC) of 700mA. It features a DC current gain (hFE) of at least 150 at 100mA and 3V. The saturation voltage (VCE(sat)) is a maximum of 400mV at 70mA and 700mA.
This device operates within a temperature range of -55°C to 150°C. The total power dissipation is rated at 342mW at 25°C ambient temperature.
The MMBT2131T1G comes in a compact SC-74 surface mount package, suitable for space-constrained designs. It is supplied in tape and reel packaging with a standard quantity of 3000 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MMBT2131T1G is 30V.
The MMBT2131T1G has a continuous collector current (IC) rating of 700mA.
The total power dissipation for the MMBT2131T1G at 25°C is 342mW.
The MMBT2131T1G operates within a temperature range of -55°C to 150°C.
The MMBT2131T1G is supplied in an SC-74 surface mount package.