| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,205,000 pcs
|
1205000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MMBT200 from On Semiconductor is a PNP bipolar junction transistor (BJT) housed in a SOT-23-3 surface mount package. This component is rated for a maximum collector-emitter voltage of 45V and a continuous collector current of 500mA. It offers a power dissipation of 350mW and operates within a temperature range of -55°C to 150°C.
Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 150mA and 5V, and a Vce saturation of 400mV maximum at 20mA and 200mA. The transistor has a frequency response up to 250MHz.
Designed for surface mounting, the MMBT200 is suitable for various general-purpose amplification and switching applications where space is a consideration. Its compliance with RoHS3 standards indicates adherence to environmental regulations regarding hazardous substances.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MMBT200 transistor has a maximum collector-emitter voltage rating of 45V.
The MMBT200 can handle a maximum continuous collector current of 500mA.
The operating temperature range for the MMBT200 is -55°C to 150°C.
The MMBT200 is supplied in a SOT-23-3 package for surface mounting.