MMBT123S-7-F The Diodes Incorporated MMBT123S-7-F is an NPN bipolar junction transistor designed for medium power amplification and switching. It features a 1A continuous collector current and an 18V collector-emitter voltage.
Mfr Part #:

MMBT123S-7-F

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The Diodes Incorporated MMBT123S-7-F is an NPN bipolar junction transistor designed for medium power amplification and switching. It features a 1A continuous collector current and an 18V collector-emitter voltage.
Total Stock: 14,990 pcs
$ Price Range: $0.99

MMBT123S-7-F Available from 1 distributor

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14,990 pcs
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MMBT123S-7-F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Case
Collector Cutoff Current
Collector-Base Voltage
Current
Current-Gain - Bandwidth Product
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cutoff Current
Emitter-Base Voltage
Frequency
Halogen Free
Mounting Type
Operating Temperature
Output Capacitance
Power
Supplier Device Package
Thermal Resistance Junction-to-Ambient
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MMBT123S-7-F Description

Short technical summary and product information.

The Diodes Incorporated MMBT123S-7-F is an NPN bipolar junction transistor (BJT) suitable for medium power amplification and switching applications. It is housed in a compact SOT-23-3 surface mount package.

 

This transistor offers a continuous collector current of 1A and a collector-emitter voltage of 18V. It has a maximum power dissipation of 300mW at 25°C ambient temperature. The DC current gain (hFE) is specified as a minimum of 150 at 100mA collector current and 1V VCE. The collector-emitter saturation voltage (VCE(SAT)) is a maximum of 500mV at 30mA base current and 300mA collector current.

 

Featuring an epitaxial planar die construction, the MMBT123S-7-F operates over a wide temperature range of -55°C to +150°C. It is designed with lead-free plating and is halogen and antimony-free, making it a RoHS compliant "Green" device. The moisture sensitivity level is rated at Level 1 per J-STD-020D.

 

Key electrical characteristics include a gain-bandwidth product (fT) of 100MHz and an output capacitance (Cobo) of 8pF. The terminals are solderable per MIL-STD-202, Method 208.

MMBT123S-7-F Quick Information

Product Type: NPN Transistor
Canonical Name: MMBT123S-7-F NPN Surface Mount Transistor
Subcategory: Bipolar (BJT) - Single

MMBT123S-7-F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

MMBT123S-7-F Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBT123S-7-F Features

  • NPN bipolar junction transistor.
  • Rated for 1A continuous collector current.
  • 18V collector-emitter voltage.
  • 300mW maximum power dissipation.
  • SOT-23-3 surface mount package.

MMBT123S-7-F Applications

  • Used in switching power supplies
  • Suitable for signal amplification
  • Ideal for low-voltage high-speed switching
  • Applicable in compact electronic circuits

MMBT123S-7-F FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MMBT123S-7-F?

The maximum collector-emitter voltage (VCEO) for the MMBT123S-7-F is 18V.

What is the continuous collector current rating?

The continuous collector current (IC) rating for the MMBT123S-7-F is 1A.

What is the power dissipation of this transistor?

The power dissipation (PD) is 300mW at 25°C ambient temperature.

What is the minimum DC current gain (hFE) at specified conditions?

The minimum DC current gain (hFE) is 150 at 100mA collector current and 1V VCE.

What is the operating temperature range?

The operating and storage temperature range is -55°C to +150°C.

What package type is the MMBT123S-7-F supplied in?

The MMBT123S-7-F is supplied in a SOT-23-3 package.

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