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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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157,433 pcs
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157433 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,870 pcs
|
2870 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ON Semiconductor MMBT100 is a single NPN bipolar junction transistor (BJT) housed in a SOT-23-3 surface mount package. This device is rated for a maximum collector-emitter voltage of 45V and can handle a continuous collector current of up to 500mA.
Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 150mA and 5V, and a Vce saturation of 400mV maximum at 20mA and 200mA. The transistor operates across a wide temperature range from -55°C to 150°C (TJ).
With a transition frequency (fT) of 250MHz, the MMBT100 is suitable for various switching and amplification applications. Its surface mount SOT-23-3 package makes it ideal for integration into compact electronic designs. The device is specified with RoHS3 compliance.
This transistor is designed for applications requiring a general-purpose NPN device with moderate voltage and current handling capabilities. Its compact package and electrical specifications make it a versatile component for board-level designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MMBT100 transistor has a collector-emitter breakdown voltage of 45V.
The MMBT100 can handle a maximum continuous collector current of 500mA.
The MMBT100 operates from -55°C to 150°C (TJ).
The MMBT100 is available in a SOT-23-3 package.
The MMBT100 is RoHS3 Compliant.