| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
435 pcs
|
435 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Mounting Type | |
| Tape & Reel |
The MMBFJ309LT1 is an N-Channel JFET transistor manufactured by On Semiconductor, suitable for VHF and UHF amplifier applications. This device offers a Drain-Source Voltage rating of 25V and a Gate-Source Voltage rating of 25V.
The JFET is housed in a SOT-23 (TO-236) surface-mount package, making it ideal for compact electronic designs. It is Pb-Free and Halogen Free, complying with RoHS standards.
Key electrical characteristics include a maximum Gate Current of 10 mAdc, a maximum Total Device Dissipation of 225 mW at 25°C, and a Junction-to-Ambient Thermal Resistance of 556 °C/W. The operating temperature range is from -55°C to +150°C.
This component is designed for applications requiring high-frequency amplification. Its interchangeable drain and source terminals offer design flexibility. The 'S' prefix variant is AEC-Q101 qualified and PPAP capable for automotive applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage is 25 Vdc.
The maximum Gate-Source Voltage is 25 Vdc.
The MMBFJ309LT1 is available in a SOT-23 package.
The Junction and Storage Temperature range is -55°C to +150°C.
The typical Gate Reverse Current is 1 nAdc.
The standard package quantity is 3,000 pieces per reel.