| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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34 pcs
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34 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MMBFJ211 is a JFET N-CH transistor manufactured by On Semiconductor. It features a drain-gate voltage of 25V and a gate-source voltage of -25V, making it suitable for low-voltage switching and amplification applications. The device can handle a maximum forward gate current of 10mA and has a total device dissipation limit of 225mW at 25°C. It is housed in a SOT23 package, suitable for surface-mount applications.
This transistor is designed for RF and switching circuits where low noise and high input impedance are required. Its electrical characteristics include a gate-source breakdown voltage of -25V and a drain-gate voltage of 25V, ensuring reliable operation within specified limits. The device operates over a junction temperature range of -55°C to 150°C, making it suitable for various environmental conditions.
The MMBFJ211 is used in RF signal filtering, low-noise amplification, and switching circuits. Its small SOT23 package allows for compact circuit designs, and its electrical specifications support high-performance applications in consumer electronics, communication equipment, and instrumentation.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-gate voltage rating is 25 V.
The maximum forward gate current is 10 mA.
The operating and storage junction temperature range is -55 to 150 °C.