| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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28,020 pcs
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28020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MMBFJ202 is an N-Channel JFET manufactured by ON Semiconductor, designed for low-level audio and general-purpose applications requiring high impedance signal sources. This device operates with a drain-gate voltage of up to 40V and a gate-source voltage of -40V.
Key electrical characteristics include a gate-source cut-off voltage typically between -0.3V and -1.5V, and a zero-gate voltage drain current ranging from 0.2mA to 1.0mA at 20V. The forward transfer admittance is specified at 500 mhos at 1.0 kHz and 20V drain-source voltage.
With a total device dissipation of 350 mW and a junction-to-ambient thermal resistance of 357 °C/W, the MMBFJ202 is suitable for moderate power applications. It is housed in a compact SOT-23-3 surface mount package, making it ideal for space-constrained designs.
The operating temperature range for this JFET is from -55°C to 150°C (TJ), ensuring reliability across a wide spectrum of environmental conditions.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-gate voltage is 40 V.
The operating and storage junction temperature range is -55°C to 150°C.
The total device dissipation is 350 mW.
The MMBFJ202 is available in a SOT-23-3 package.
The gate-source cut-off voltage for the MMBFJ201 is -0.3 V to -1.5 V.
The zero-gate voltage drain current for the MMBFJ201 is 0.2 mA to 1.0 mA.
The forward transfer admittance for the MMBFJ201 is 500 mhos.