| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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30,000 pcs
|
30000 pcs | On Request | 1 | On Request | On Request | 2122+ | On Request | On Request | |
|
28,020 pcs
|
28020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,096 pcs
|
1096 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor MMBFJ201 is an N-Channel JFET primarily designed for low-level audio and general-purpose applications requiring high impedance signal sources. This device offers a drain-gate voltage rating of 40V and a gate-source voltage rating of -40V.
With a maximum power dissipation of 350 mW at 25°C, the MMBFJ201 is suitable for various amplification tasks. Its operating junction temperature range is from -55°C to 150°C.
The JFET is packaged in a TO-236-3, SC-59, SOT-23-3 surface-mount package, making it convenient for integration into compact electronic designs. The device exhibits a gate-source cut-off voltage typically between -0.3V and -1.5V for the MMBFJ201 variant, and a zero-gate voltage drain current (IDSS) ranging from 0.2mA to 1.0mA at 20V drain-source voltage.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-gate voltage for the MMBFJ201 is 40V.
The MMBFJ201 operates between -55°C and 150°C.
The maximum power dissipation for the MMBFJ201 is 350 mW.
The MMBFJ201 is available in a TO-236-3, SC-59, SOT-23-3 package.
The gate-source cut-off voltage for the MMBFJ201 is between -0.3V and -1.5V.
The zero-gate voltage drain current (IDSS) for the MMBFJ201 is between 0.2mA and 1.0mA at 20V.