MMBFJ201 The MMBFJ201 is an N-Channel JFET from ON Semiconductor designed for general-purpose amplification. It features a 40V breakdown voltage and is housed in a compact SOT-23-3 package.
Mfr Part #:

MMBFJ201

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMBFJ201 is an N-Channel JFET from ON Semiconductor designed for general-purpose amplification. It features a 40V breakdown voltage and is housed in a compact SOT-23-3 package.
✓ Total Stock: 59,116 pcs
$ Price Range: $0.99

MMBFJ201 Available from 3 distributors

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30,000 pcs
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28,020 pcs
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MMBFJ201 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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MMBFJ201 Description

Short technical summary and product information.

The ON Semiconductor MMBFJ201 is an N-Channel JFET primarily designed for low-level audio and general-purpose applications requiring high impedance signal sources. This device offers a drain-gate voltage rating of 40V and a gate-source voltage rating of -40V.

 

With a maximum power dissipation of 350 mW at 25°C, the MMBFJ201 is suitable for various amplification tasks. Its operating junction temperature range is from -55°C to 150°C.

 

The JFET is packaged in a TO-236-3, SC-59, SOT-23-3 surface-mount package, making it convenient for integration into compact electronic designs. The device exhibits a gate-source cut-off voltage typically between -0.3V and -1.5V for the MMBFJ201 variant, and a zero-gate voltage drain current (IDSS) ranging from 0.2mA to 1.0mA at 20V drain-source voltage.

MMBFJ201 Quick Information

Product Type: JFET Transistor
Canonical Name: MMBFJ201 N-Channel JFET
Subcategory: N-Channel

MMBFJ201 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBFJ201 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBFJ201 Features

  • N-Channel JFET for general-purpose amplification.
  • 40V drain-gate voltage rating.
  • 350mW maximum power dissipation.
  • Compact SOT-23-3 surface-mount package.
  • Wide operating temperature range.

MMBFJ201 Applications

  • Used in RF signal amplification
  • Ideal for high-impedance switching circuits
  • Suitable for low-noise analog applications
  • Compact surface-mount design for space-constrained layouts

MMBFJ201 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-gate voltage for the MMBFJ201?

The maximum drain-gate voltage for the MMBFJ201 is 40V.

What is the operating temperature range of the MMBFJ201?

The MMBFJ201 operates between -55°C and 150°C.

What is the power dissipation of the MMBFJ201?

The maximum power dissipation for the MMBFJ201 is 350 mW.

What package type is the MMBFJ201 available in?

The MMBFJ201 is available in a TO-236-3, SC-59, SOT-23-3 package.

What is the gate-source cut-off voltage for the MMBFJ201?

The gate-source cut-off voltage for the MMBFJ201 is between -0.3V and -1.5V.

What is the zero-gate voltage drain current (IDSS) for the MMBFJ201?

The zero-gate voltage drain current (IDSS) for the MMBFJ201 is between 0.2mA and 1.0mA at 20V.

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