Mfr Part #:

MMBFJ177LT1G

The ON Semiconductor MMBFJ177LT1G is a P-Channel JFET designed for various applications. It features a 30V voltage rating and is housed in a SOT-23-3 package.

✓ Total Stock: 112,296 pcs

$ Price Range: $0.99

MMBFJ177LT1G Available from 7 distributors

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Seba Components ✓ Non-Authorised Inventory information	48,000 pcs On Request	48000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	45,212 pcs On Request	45212 pcs	On Request	1	On Request	On Request	21+	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	13,020 pcs On Request	13020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	3,147 pcs On Request	3147 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Innova Technologies ✓ Non-Authorised Inventory information	2,372 pcs On Request	2372 pcs	On Request	1	On Request	On Request	2217	On Request	On Request
Bristol Electronics ✓ Non-Authorised Inventory information	535 pcs On Request	535 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Speed Components Ltd ✓ Non-Authorised Inventory information	10 pcs On Request	10 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

MMBFJ177LT1G Description

Short technical summary and product information.

The MMBFJ177LT1G from ON Semiconductor is a P-Channel depletion mode JFET. It is designed for applications requiring a 30V breakdown voltage and offers a low on-resistance of 300 Ohms.

This JFET operates within a wide temperature range of -55°C to 150°C and has a maximum power dissipation of 225 mW. Key electrical characteristics include a gate-source cutoff voltage between 0.8V and 2.5V, and a zero-gate-voltage drain current ranging from -1.5 mAdc to -20 mAdc.

The device comes in a compact SOT-23-3 (TO-236) surface mount package, making it suitable for space-constrained designs. It is also Pb-free and halogen-free, aligning with environmental compliance standards.

MMBFJ177LT1G Quick Information

Product Type: JFET

Series: MMBFJ177LT1G

Canonical Name: MMBFJ177LT1G P-Channel JFET

Subcategory: P-Channel

MMBFJ177LT1G Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

MMBFJ177LT1G Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBFJ177LT1G Features

P-Channel depletion mode JFET.
30V drain-gate voltage rating.
225 mW maximum power dissipation.
Surface mount SOT-23-3 package.
Wide -55°C to 150°C operating temperature.

MMBFJ177LT1G Applications

Used in low-power switching circuits
Suitable for amplification in compact devices
Ideal for surface-mount applications
Applicable in RF and analog circuits

MMBFJ177LT1G FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-gate voltage for the MMBFJ177LT1G?

-25 Vdc

What is the operating temperature range for this JFET?

-55°C to 150°C

What package type is the MMBFJ177LT1G supplied in?

SOT-23-3 (TO-236)

Is the MMBFJ177LT1G RoHS compliant?

RoHS3 Compliant

What is the zero-gate-voltage drain current (IDSS)?

-1.5 to -20 mAdc

What is the input capacitance (Ciss) of the MMBFJ177LT1G?

11 pF

Category	Transistors - JFETs
Manufacturer Name	On Semiconductor
Current	1.5 mA
FET Type	P-Channel
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	11pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C
Power	225 mW
Resistance	300 Ω
Supplier Device Package	SOT-23-3 (TO-236)
Voltage	30 V