MMBFJ175LT1G The MMBFJ175LT1G is a P-Channel JFET transistor from ON Semiconductor. It features a 30V drain-gate voltage and is housed in a compact SOT-23-3 package.
Mfr Part #:

MMBFJ175LT1G

Available from 7 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMBFJ175LT1G is a P-Channel JFET transistor from ON Semiconductor. It features a 30V drain-gate voltage and is housed in a compact SOT-23-3 package.
✓ Total Stock: 58,348 pcs
$ Price Range: $0.99

MMBFJ175LT1G Available from 7 distributors

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✓ Non-Authorised

MMBFJ175LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
FET Type
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Resistance
Supplier Device Package
Voltage

MMBFJ175LT1G Description

Short technical summary and product information.

The MMBFJ175LT1G is a P-Channel, depletion-mode JFET transistor manufactured by ON Semiconductor. It is designed for applications requiring a 30V drain-gate voltage and can handle a maximum power dissipation of 225 mW at 25°C. The device operates across a wide temperature range from -55°C to 150°C.

 

Key electrical characteristics include a gate-source cutoff voltage between 3.0V and 6.0V, and a zero gate-voltage drain current ranging from 7 mA to 60 mA at 15V. The input capacitance (Ciss) is typically 11 pF at 1.0 MHz, and the reverse transfer capacitance (Crss) is 5.5 pF under the same conditions. The drain source on-resistance (rDS(on)) is a maximum of 125 Ω.

 

This JFET is supplied in a surface-mount SOT-23-3 (TO-236) package, making it suitable for compact electronic designs. It is Pb-free and halogen-free, adhering to modern environmental standards.

MMBFJ175LT1G Quick Information

Product Type: JFET Transistor
Series: MMBFJ175LT1G
Canonical Name: MMBFJ175LT1G P-Channel Depletion JFET
Subcategory: P-Channel

MMBFJ175LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MMBFJ175LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBFJ175LT1G Features

  • P-Channel depletion mode JFET transistor.
  • 30V maximum drain-gate voltage.
  • 225mW maximum power dissipation.
  • Surface mount SOT-23-3 package.
  • Wide operating temperature range.

MMBFJ175LT1G Applications

  • Suitable for general purpose switching.
  • Used in signal amplification circuits.
  • Ideal for low-power applications.
  • Component in electronic control systems.

MMBFJ175LT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-gate voltage for the MMBFJ175LT1G?

The maximum drain-gate voltage is 25 V.

What is the operating temperature range of the MMBFJ175LT1G?

The operating temperature range is -55°C to 150°C.

What is the package type for the MMBFJ175LT1G?

The MMBFJ175LT1G is available in a SOT-23-3 package.

What is the RoHS status of the MMBFJ175LT1G?

The MMBFJ175LT1G is RoHS3 Compliant.

What is the zero gate-voltage drain current (IDSS) for this JFET?

The zero gate-voltage drain current is between 7 mA and 60 mA at 15V.

What is the input capacitance (Ciss) of the MMBFJ175LT1G?

The input capacitance is typically 11 pF at 1.0 MHz and 10V VGS.

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