MMBFJ113 The MMBFJ113 is an N-Channel JFET from On Semiconductor. It features a 35V breakdown voltage and a 350mW maximum power rating.
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MMBFJ113

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MMBFJ113 is an N-Channel JFET from On Semiconductor. It features a 35V breakdown voltage and a 350mW maximum power rating.
✓ Total Stock: 185,555 pcs
$ Price Range: $0.99

MMBFJ113 Available from 5 distributors

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MMBFJ113 Specifications Quick View

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MMBFJ113 Description

Short technical summary and product information.

The MMBFJ113 is an N-Channel Junction Field-Effect Transistor (JFET) manufactured by On Semiconductor. It is designed for surface mount applications and comes in a compact SOT-23-3 package.

 

Key electrical characteristics include a breakdown voltage of 35V and a maximum drain current (Idss) of 2mA at 15V. The device offers a typical on-resistance (RDS(On)) of 100 Ohms and a cutoff voltage of 500mV at 1µA. With a maximum power dissipation of 350mW, it is suitable for various general-purpose applications.

 

The operating temperature range for the MMBFJ113 is -55°C to 150°C (TJ), making it robust for demanding environments. Its surface mount capability simplifies integration into printed circuit boards, and the SOT-23-3 package is standard for many electronic designs.

 

This JFET is categorized under Discrete Semiconductor Products and specifically within the Transistors - JFETs category. It adheres to RoHS3 compliance standards.

MMBFJ113 Quick Information

Product Type: JFET
Canonical Name: MMBFJ113 N-Channel JFET
Subcategory: JFET

MMBFJ113 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBFJ113 Estimated Pricing

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Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBFJ113 Features

  • N-Channel JFET for versatile applications.
  • 35V breakdown voltage rating.
  • 350mW maximum power dissipation.
  • Surface mount SOT-23-3 package.
  • Wide operating temperature range.

MMBFJ113 Applications

  • Ideal for general-purpose amplification.
  • Suitable for switching applications.
  • Used in signal processing circuits.
  • Component in RF applications.

MMBFJ113 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the FET type of the MMBFJ113?

The MMBFJ113 is an N-Channel FET.

What is the breakdown voltage of the MMBFJ113?

The breakdown voltage of the MMBFJ113 is 35V.

What is the typical drain current (Idss) for the MMBFJ113?

The typical drain current (Idss) for the MMBFJ113 is 2mA at 15V.

What is the maximum power dissipation of the MMBFJ113?

The maximum power dissipation of the MMBFJ113 is 350mW.

What is the operating temperature range for the MMBFJ113?

The MMBFJ113 operates between -55°C and 150°C (TJ).

What package type is the MMBFJ113 supplied in?

The MMBFJ113 is supplied in a TO-236-3, SC-59, SOT-23-3 package.

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