| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
373,020 pcs
|
373020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
21,000 pcs
|
21000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
162 pcs
|
162 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
56 pcs
|
56 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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The ON Semiconductor MMBFJ111 is an N-Channel Junction Field-Effect Transistor (JFET) designed for various electronic applications. It features a breakdown voltage of 35V and a maximum drain current (Idss) of 20mA at 0Vgs and 15Vds. The device has a maximum power dissipation of 350mW and a typical drain-source on-resistance of 30 Ohms.
This JFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in a compact TO-236-3, SC-59, SOT-23-3 package, making it suitable for surface mount applications. The MMBFJ111 is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
Key electrical characteristics include a gate-source cutoff voltage (VGS off) of 3V at 1µA. Its N-Channel configuration and SOT-23 package make it a versatile component for signal amplification and switching circuits where space is a consideration.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage (V(BR)GSS) of the MMBFJ111 is 35V.
The maximum drain current (Idss) is 20mA at 15Vds with Vgs=0.
The operating temperature range is -55°C to 150°C (TJ).
The MMBFJ111 is supplied in a TO-236-3, SC-59, SOT-23-3 package.
The MMBFJ111 is ROHS3 Compliant.