MMBFJ111 The ON Semiconductor MMBFJ111 is an N-Channel JFET transistor in a SOT-23-3 package. It offers a 35V breakdown voltage and 20mA drain current.
Mfr Part #:

MMBFJ111

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MMBFJ111 is an N-Channel JFET transistor in a SOT-23-3 package. It offers a 35V breakdown voltage and 20mA drain current.
✓ Total Stock: 394,288 pcs
$ Price Range: $0.99

MMBFJ111 Available from 5 distributors

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✓ Non-Authorised

MMBFJ111 Specifications Quick View

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MMBFJ111 Description

Short technical summary and product information.

The ON Semiconductor MMBFJ111 is an N-Channel Junction Field-Effect Transistor (JFET) designed for various electronic applications. It features a breakdown voltage of 35V and a maximum drain current (Idss) of 20mA at 0Vgs and 15Vds. The device has a maximum power dissipation of 350mW and a typical drain-source on-resistance of 30 Ohms.

 

This JFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in a compact TO-236-3, SC-59, SOT-23-3 package, making it suitable for surface mount applications. The MMBFJ111 is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.

 

Key electrical characteristics include a gate-source cutoff voltage (VGS off) of 3V at 1µA. Its N-Channel configuration and SOT-23 package make it a versatile component for signal amplification and switching circuits where space is a consideration.

MMBFJ111 Quick Information

Product Type: JFET Transistor
Canonical Name: MMBFJ111 N-Channel JFET
Subcategory: N-Channel

MMBFJ111 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MMBFJ111 Estimated Pricing

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Estimated market price range - modelled values for guidance only, not live distributor offers.

MMBFJ111 Features

  • N-Channel JFET transistor.
  • 35V breakdown voltage rating.
  • 20mA drain current (Idss).
  • 350mW maximum power dissipation.
  • Surface mount SOT-23-3 package.

MMBFJ111 Applications

  • Suitable for low-voltage switching applications.
  • Used in RF and audio signal amplification.
  • Ideal for portable electronic device circuits.
  • Applicable in sensor and measurement systems.

MMBFJ111 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the MMBFJ111?

The breakdown voltage (V(BR)GSS) of the MMBFJ111 is 35V.

What is the maximum drain current (Idss) for the MMBFJ111?

The maximum drain current (Idss) is 20mA at 15Vds with Vgs=0.

What is the operating temperature range for this JFET?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the MMBFJ111 supplied in?

The MMBFJ111 is supplied in a TO-236-3, SC-59, SOT-23-3 package.

Is the MMBFJ111 RoHS compliant?

The MMBFJ111 is ROHS3 Compliant.

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