| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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31,020 pcs
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31020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MMBFJ110 is an N-Channel Junction Field-Effect Transistor (JFET) manufactured by On Semiconductor. This device is specifically designed for digital switching applications where very low on-resistance is critical.
Key electrical characteristics include a Drain-Gate Voltage of 25V and a Gate-Source Voltage of -25V. The Zero-Gate Voltage Drain Current (IDSS) is 10 mA at 15V, and the Drain-Source On Resistance (RDS(on)) is a maximum of 18 Ohms under specific test conditions. The device also features low input and output capacitances, with Drain-Gate & Source-Gate On Capacitance at 85 pF and Off Capacitance at 15 pF.
With a maximum power dissipation of 460 mW and a junction temperature rating of 150°C, the MMBFJ110 is suitable for various applications. It operates within a temperature range of -55°C to 150°C.
The MMBFJ110 comes in a compact SOT-23-3 surface mount package (TO-236-3, SC-59). This mounting type is ideal for automated assembly processes and space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Gate Voltage for the MMBFJ110 is 25 V.
The Zero-Gate Voltage Drain Current (IDSS) is a minimum of 10 mA at 15V VDS and 0V VGS.
The maximum Drain-Source On Resistance (RDS(on)) is 18 Ω.
The operating temperature range for the MMBFJ110 is -55°C to 150°C.
The MMBFJ110 is supplied in a TO-236-3, SC-59, SOT-23-3 package.