| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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30,000 pcs
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30000 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
994 pcs
|
994 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MMBF5485 from ON Semiconductor is an N-Channel RF JFET transistor. This device is designed primarily for electronic switching applications, such as low on-resistance analog switching. It is housed in a compact SOT-23 package, making it suitable for surface-mount designs.
Key electrical characteristics include a Drain-Gate Voltage of 25V and a Gate-Source Voltage of -25V. The typical Zero-Gate Voltage Drain Current (IDSS) is 5.0 mA at 15V VDS, with a minimum of 1.0 mA. The Forward Transfer Conductance (gfs) is a minimum of 3000 mhos at 1.0 kHz. The operating and storage junction temperature range is from -55°C to +150°C.
This RF JFET is suitable for applications requiring high frequency performance, with an operating frequency up to 400MHz. The device has a total power dissipation of 225 mW and a thermal resistance of 556 °C/W junction to ambient. The SOT-23-3 package is designed for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Gate Voltage is 25V.
The typical Zero-Gate Voltage Drain Current is 5.0 mA.
The MMBF5485 is available in a SOT-23 package.
The operating temperature range is -55°C to +150°C.