| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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125,549 pcs
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125549 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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19,020 pcs
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19020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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4,737 pcs
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4737 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,339 pcs
|
2339 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor MMBF5484 is an N-Channel RF JFET Transistor designed for electronic switching applications, including low on-resistance analog switching. It is housed in a compact SOT-23-3 surface-mount package.
Key electrical characteristics include a Drain-Gate Voltage of 25V, a Gate-Source Voltage of -25V, and a Forward Gate Current of 10mA. The device offers a Zero-Gate Voltage Drain Current of up to 5.0 mA and a Forward Transfer Conductance of 3000 mhos at 1.0 kHz. Its Input Conductance is 100 mhos at 100 MHz, and Output Conductance is 50 mhos at 1.0 kHz.
The operating and storage junction temperature range is from -55°C to +150°C. The total device dissipation is rated at 225 mW at 25°C, with a derating of 1.8 mW/°C above that temperature. The thermal resistance from junction to ambient is 556 °C/W when mounted on an FR-4 PCB.
This transistor is suitable for various RF applications requiring small-signal amplification and switching. Its surface-mount SOT-23-3 package facilitates integration into compact electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Gate Voltage is 25 V.
The Gate-Source Voltage is rated at -25 V.
The operating and storage junction temperature range is -55°C to +150°C.
The MMBF5484 is available in a SOT-23-3 package.
The MMBF5484 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.