| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
361,600 pcs
|
361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| FET Type | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Noise Figure | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Voltage |
The MMBF5459 is an N-Channel JFET transistor manufactured by On Semiconductor, suitable for low-level audio amplification and analog switching applications. It is sourced from Process 55 and offers a drain-gate voltage of 25V and a gate-source voltage of -25V.
Key electrical characteristics include a zero-gate voltage drain current (IDSS) of 4 mA @ 15V and a gate-source cutoff voltage (VGS(off)) of -2V @ 10 nA. The forward transfer conductance (gfs) is typically 2000 µmhos, and the input capacitance (Ciss) is a maximum of 7 pF @ 15V.
This JFET is designed for surface mounting and comes in a TO-236-3, SC-59, or SOT-23-3 package. It operates within a temperature range of -55°C to +150°C (TJ) and has a maximum power dissipation of 350 mW. The device is RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The gate-source breakdown voltage is -25 V.
The zero-gate voltage drain current (IDSS) is a minimum of 4 mA at 15V.
The gate-source cutoff voltage (VGS(off)) is a maximum of -2V at 10 nA.
The operating and storage junction temperature range is -55°C to +150°C.
The MMBF5459 is available in a SOT-23-3 surface mount package.