| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
236,720 pcs
|
236720 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
18,000 pcs
|
18000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| FET Type | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Voltage |
The MMBF5103 from On Semiconductor is an N-Channel JFET specifically engineered for applications such as low-level analog switching, sample and hold circuits, and chopper-stabilized amplifiers. This device boasts a drain-gate voltage rating of 40V and a maximum power dissipation of 350mW.
Key electrical characteristics include a gate-source cut-off voltage ranging from -1.2V to -2.7V and a zero-gate voltage drain current (IDSS) between 10mA and 40mA at 15V. The input capacitance (Ciss) is a maximum of 16pF at 15V, and the reverse transfer capacitance (Crss) is 6.0pF at 1.0MHz.
The MMBF5103 operates within a junction temperature range of -55°C to 150°C. It is supplied in a compact SOT-23-3 surface-mount package, making it suitable for space-constrained designs. The device is also noted as being Pb-Free and Halide Free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-gate breakdown voltage is 40V.
The maximum power dissipation is 350 mW.
The operating junction temperature range is -55°C to 150°C.
The MMBF5103 is supplied in a SOT-23-3 package.
The gate-source cut-off voltage is between -1.2V and -2.7V.
The typical zero-gate voltage drain current is 10 mA at 15V.
The maximum input capacitance is 16 pF at 15V and 1.0 MHz.