| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,500 pcs
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1500 pcs | On Request | 1 | On Request | On Request | 1804+ | On Request | On Request |
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The MMBF4416LT1G from ON Semiconductor is a preferred device JFET transistor designed for VHF/UHF amplifier applications. This N-Channel JFET operates with a maximum drain-source voltage of 30V and a maximum gate current of 10mAdc. Its electrical characteristics include a forward transfer admittance ranging from 4500 to 7500 mhos at 1.0 kHz and an output capacitance of 2.0 pF at 1.0 MHz.
This transistor is housed in a SOT-23-3 (TO-236) surface mount package, making it suitable for compact electronic designs. The device has a maximum power dissipation of 225mW at 25°C on an FR-5 board. The operating and storage temperature range is from -55°C to +150°C.
Key electrical parameters include a gate source cutoff voltage of -6.0Vdc and a zero-gate-voltage drain current (IDSS) between 5.0 and 15 mAdc. The MMBF4416LT1G is designed for RF applications requiring stable amplification characteristics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30 Vdc.
The zero-gate-voltage drain current (IDSS) ranges from 5.0 to 15 mAdc.
The MMBF4416LT1G is supplied in a SOT-23-3 (TO-236) surface mount package.
The operating and storage temperature range is -55°C to +150°C.
The forward transfer admittance is between 4500 and 7500 mhos at 1.0 kHz.