| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,712 pcs
|
2712 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Input Capacitance | |
| Mounting Type | |
| Tape & Reel |
The MMBF4416LT1 from ON Semiconductor is a preferred device JFET transistor designed for VHF/UHF amplifier applications. This N-Channel device features a maximum drain-source voltage of 30 Vdc and a maximum gate current of 10 mAdc.
Key electrical characteristics include a forward transfer admittance ranging from 4500 to 7500 mhos at 1.0 kHz, an output admittance of up to 50 mhos, and input capacitance of 4.0 pF. The device also has a reverse transfer capacitance of 0.8 pF and an output capacitance of 2.0 pF.
With a total device dissipation of 225 mW at 25°C on an FR-5 board, the MMBF4416LT1 is suitable for various RF applications. It operates within a junction and storage temperature range of -55 to +150 °C. The transistor is housed in a SOT-23 (TO-236) surface-mount package and is available on tape and reel in quantities of 3,000 units.
This device is Pb-Free, indicating compliance with environmental regulations. Its specifications make it a reliable choice for high-frequency signal amplification circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the MMBF4416LT1 is 30 Vdc.
The MMBF4416LT1 is supplied in a SOT-23 (TO-236) package.
The MMBF4416LT1 is RoHS3 Compliant.
The forward transfer admittance (|Yfs|) ranges from 4500 to 7500 mhos at 1.0 kHz.
The input capacitance (Ciss) is a maximum of 4.0 pF at 1.0 MHz.