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9,000 pcs
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9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MMBF4091 is an N-Channel FET manufactured by On Semiconductor, suitable for low-level analog switching applications, sample and hold circuits, and chopper-stabilized amplifiers. This device operates within a junction temperature range of -55°C to +150°C and has a total power dissipation of 350 mW at 25°C.
Key electrical characteristics include a drain-gate voltage of 40V and a gate-source voltage of -40V. The zero-gate voltage drain current (IDSS) is typically 8 mA at 20V. It offers a low drain-source on-resistance (rDS(on)) of 80 Ω at 1 mA and 1 kHz, and a drain-source on-voltage (VDS(on)) of 0.2V at 2.5 mA.
Packaged in a surface-mount SOT-23-3 configuration, the MMBF4091 is designed for ease of integration into compact electronic designs. Its input capacitance (Ciss) is 16 pF at 1 MHz, and reverse transfer capacitance (Crss) is 5 pF. Switching times are also specified, with turn-on time at 60 ns and turn-off time at 80 ns.
This device is Pb-Free and Halide Free, aligning with environmental compliance standards. The operating temperature range is -55°C to 150°C (TJ).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-gate voltage is 40V.
The operating temperature range is -55°C to 150°C (TJ).
The total device dissipation is 350 mW.
The MMBF4091 is available in a TO-236-3, SC-59, SOT-23-3 package.
The zero-gate voltage drain current (IDSS) is typically 8 mA at 20V.
The drain-source on-resistance (rDS(on)) is a maximum of 80 Ω.
The input capacitance (Ciss) is a maximum of 16 pF at 1.0 MHz.