| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,455 pcs
|
2455 pcs | On Request | 1 | On Request | On Request | / | On Request | On Request | |
|
1,285 pcs
|
1285 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The MMBF2202PT1 from ON Semiconductor is a P-Channel Power MOSFET designed for efficient power management in portable and battery-powered devices. It offers a drain-to-source voltage of 20V and a continuous drain current of 300mA at 25°C ambient temperature.
Key electrical characteristics include a low Rds(on) of 2.2 Ohm at 200mA and 10V Vgs, which contributes to higher efficiency and extended battery life. The device also features a gate threshold voltage of 2.4V at 250µA and an input capacitance of 50pF at 5V.
This MOSFET is housed in a miniature SC-70/SOT-323 surface mount package, saving valuable board space. It is suitable for applications such as DC-DC converters and power management circuitry in products like computers, printers, cellular phones, and PCMCIA cards.
The device operates within a temperature range of -55°C to 150°C and is available in a Pb-Free package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 20 Vdc.
The continuous drain current is 300 mAdc at 25°C.
The Rds On is a maximum of 2.2 Ohm at 200mA and 10V Vgs.
The MMBF2202PT1 is available in the SC-70/SOT-323 package.
The RoHS status is RoHS3 Compliant.